IPB100N08S2L-07-VB Product details
Product introduction:
IPB100N08S2L-07-VB is a high-performance single N-channel MOSFET packaged in TO263, designed for medium-to-high voltage and high current applications. Its drain-source voltage (VDS) is as high as 80V, suitable for circuits requiring higher voltage tolerance. The on-resistance (RDS(ON)) of this MOSFET is only 6mΩ at VGS of 10V, ensuring low power consumption and high efficiency. Using Trench technology, IPB100N08S2L-07-VB provides excellent switching performance and stability, suitable for electronic modules requiring high power and low loss.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ@VGS=4.5V
- 6mΩ@VGS=10V
- **Drain current (ID)**: 120A
- **Technology**: Trench technology with low on-resistance and high switching speed
- **Thermal resistance (Rth(ja))**: About 62 K/W (typical value)
Domain and module applications:
1. **High-efficiency switching power supply (SMPS)**: IPB100N08S2L-07-VB is an ideal choice for switching power supply (SMPS). Its low on-resistance and high current capability can effectively reduce energy loss and improve system efficiency. It is particularly suitable for high-power power modules and voltage regulators.
2. **Electric vehicle (EV) charging and battery management system**: In the charging system and battery management system of electric vehicles, this MOSFET provides reliable current control and efficient power transmission. Its high voltage tolerance and low power consumption characteristics are suitable for control and protection during battery charging and discharging.
3. **Industrial motor drive**: IPB100N08S2L-07-VB can handle high current loads and is very suitable for use in industrial motor drive systems such as inverters and servo drives. Its low on-resistance helps improve system efficiency and reduce heat generation.
4. **Server Power Management**: In power modules for data centers and servers, the IPB100N08S2L-07-VB can effectively manage high-power loads, ensuring the stability and efficiency of the power supply. Its characteristics make it suitable for use in power conditioning and load distribution modules.
5. **Power Protection Circuit**: Due to its low on-resistance and high current capability, this MOSFET can effectively control current and prevent overcurrent conditions in power protection circuits, protecting electronic systems from damage.
Technical support:
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