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IPB100N08S2-07-VB Product details
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1. Product Introduction
**IPB100N08S2-07-VB** is a high-performance single N-channel MOSFET in TO263 package type. Designed to handle high voltage and high current applications, this MOSFET has a drain-source voltage (VDS) of 80V and a gate-source voltage (VGS) of ±20V. It uses Trench trench technology, with an on-resistance of 10mΩ at a gate-source voltage of 4.5V and 6mΩ at 10V, capable of supporting a continuous drain current (ID) of up to 120A. This low on-resistance and high current handling capability make it an excellent performer in applications requiring high efficiency and high power density.
**IPB100N08S2-07-VB** is a high-performance single N-channel MOSFET in TO263 package type. Designed to handle high voltage and high current applications, this MOSFET has a drain-source voltage (VDS) of 80V and a gate-source voltage (VGS) of ±20V. It uses Trench trench technology, with an on-resistance of 10mΩ at a gate-source voltage of 4.5V and 6mΩ at 10V, capable of supporting a continuous drain current (ID) of up to 120A. This low on-resistance and high current handling capability make it an excellent performer in applications requiring high efficiency and high power density.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description
- **Model**: IPB100N08S2-07-VB
- **Package**: TO263
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-up voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 6mΩ @ VGS=10V
- **Continuous drain current (ID)**: 120A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 175°C
- **Switching time**: Optimized for high frequency operation
- **Gate charge (Qg)**: High performance switch, suitable for high switching frequency applications
- **Model**: IPB100N08S2-07-VB
- **Package**: TO263
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-up voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 6mΩ @ VGS=10V
- **Continuous drain current (ID)**: 120A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 175°C
- **Switching time**: Optimized for high frequency operation
- **Gate charge (Qg)**: High performance switch, suitable for high switching frequency applications
Domain and module applications：
3. Applicable fields and modules
**IPB100N08S2-07-VB** MOSFET has high voltage and high current handling capabilities, making it widely used in multiple fields and modules. Here are some typical application scenarios:
- **Power management**: This MOSFET is very suitable for applications such as high voltage and high current DC-DC converters, switching power supplies and power regulators. Low on-resistance helps improve conversion efficiency and reduce power consumption, and is suitable for industrial power supplies, server power supplies and high-power power adapters.
- **Electric Vehicles (EV)**: In battery management systems (BMS) and electric drive systems, IPB100N08S2-07-VB can effectively control large currents and optimize the performance of batteries and motors. Its high current handling capability and low on-resistance help improve system efficiency and endurance.
- **Motor drive**: In high-power devices such as industrial automation and robots, MOSFETs can be used to drive motors, providing stable power output and low losses. Particularly suitable for high voltage and high current motor control applications.
- **Uninterruptible Power Supply (UPS)**: In UPS systems and inverters, this MOSFET can handle high voltage and high current, provide stable power output, and improve the overall efficiency and reliability of the system.
- **Consumer Electronic Devices**: Especially in chargers and power modules that require high efficiency and high voltage processing, the low on-resistance and high current capability of this MOSFET can effectively improve the energy transmission efficiency of the equipment, reduce power consumption, and extend battery life.
In short, the **IPB100N08S2-07-VB** MOSFET is an ideal choice for high-efficiency, high-power density applications with its high voltage, low on-resistance and high current handling capabilities, which can significantly improve the performance and reliability of the system.
**IPB100N08S2-07-VB** MOSFET has high voltage and high current handling capabilities, making it widely used in multiple fields and modules. Here are some typical application scenarios:
- **Power management**: This MOSFET is very suitable for applications such as high voltage and high current DC-DC converters, switching power supplies and power regulators. Low on-resistance helps improve conversion efficiency and reduce power consumption, and is suitable for industrial power supplies, server power supplies and high-power power adapters.
- **Electric Vehicles (EV)**: In battery management systems (BMS) and electric drive systems, IPB100N08S2-07-VB can effectively control large currents and optimize the performance of batteries and motors. Its high current handling capability and low on-resistance help improve system efficiency and endurance.
- **Motor drive**: In high-power devices such as industrial automation and robots, MOSFETs can be used to drive motors, providing stable power output and low losses. Particularly suitable for high voltage and high current motor control applications.
- **Uninterruptible Power Supply (UPS)**: In UPS systems and inverters, this MOSFET can handle high voltage and high current, provide stable power output, and improve the overall efficiency and reliability of the system.
- **Consumer Electronic Devices**: Especially in chargers and power modules that require high efficiency and high voltage processing, the low on-resistance and high current capability of this MOSFET can effectively improve the energy transmission efficiency of the equipment, reduce power consumption, and extend battery life.
In short, the **IPB100N08S2-07-VB** MOSFET is an ideal choice for high-efficiency, high-power density applications with its high voltage, low on-resistance and high current handling capabilities, which can significantly improve the performance and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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