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IPB100N06S3L-03-VB Product details
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1. Product Introduction of IPB100N06S3L-03-VB MOSFET
IPB100N06S3L-03-VB is a high-performance N-channel power MOSFET in TO-263 package, designed for applications requiring high current carrying and high-efficiency switching. Its maximum drain-source voltage (VDS) is 60V, supporting a continuous drain current of up to 270A, suitable for high-power and low-loss application environments. This MOSFET uses advanced trench technology (Trench) to provide very low on-resistance, ensuring high efficiency under high switching frequency and high current conditions. IPB100N06S3L-03-VB has a high gate voltage tolerance and threshold voltage, enabling it to provide stable and reliable performance in a variety of complex power management and power control applications.
IPB100N06S3L-03-VB is a high-performance N-channel power MOSFET in TO-263 package, designed for applications requiring high current carrying and high-efficiency switching. Its maximum drain-source voltage (VDS) is 60V, supporting a continuous drain current of up to 270A, suitable for high-power and low-loss application environments. This MOSFET uses advanced trench technology (Trench) to provide very low on-resistance, ensuring high efficiency under high switching frequency and high current conditions. IPB100N06S3L-03-VB has a high gate voltage tolerance and threshold voltage, enabling it to provide stable and reliable performance in a variety of complex power management and power control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | 2.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description of IPB100N06S3L-03-VB MOSFET
- **Package type**: TO-263
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 7mΩ @ VGS=4.5V
- 2.5mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 270A
- **Technology**: Trench technology
- **Package type**: TO-263
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 7mΩ @ VGS=4.5V
- 2.5mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 270A
- **Technology**: Trench technology
Domain and module applications：
3. Application fields and module examples of IPB100N06S3L-03-VB
1. **High-power DC-DC converter**: IPB100N06S3L-03-VB is widely used in high-power DC-DC converters due to its low on-resistance and high current carrying capacity. This MOSFET can handle large currents and optimize conversion efficiency in high-efficiency power management modules, and is suitable for server power supplies, industrial power supplies, and battery management systems for electric vehicles.
2. **Electric vehicle motor drive**: In the motor control system of electric vehicles, the high current handling capability and low on-resistance of IPB100N06S3L-03-VB make it an ideal choice. This MOSFET can effectively manage the motor drive current, improve the overall efficiency and performance of electric vehicles, and ensure the smooth operation of the motor.
3. **High-frequency switching power supply**: In high-frequency switching power supply applications, such as communication equipment power supply and industrial equipment power supply, the low on-resistance and excellent switching performance of IPB100N06S3L-03-VB can reduce power loss and improve conversion efficiency. This makes it particularly suitable for power modules that require high-frequency switching operations.
4. **High-power LED driver**: In high-power LED lighting systems, IPB100N06S3L-03-VB can be used in LED drive circuits to provide stable current control and optimize the brightness and efficiency of LEDs. Its high current carrying capacity and low on-resistance help improve the overall performance and reliability of the lighting system.
In summary, IPB100N06S3L-03-VB MOSFET is widely used in high-power DC-DC converters, electric vehicle motor drives, high-frequency switching power supplies, and high-power LED drivers with its high current carrying capacity, low on-resistance and excellent switching performance, providing efficient and reliable power management solutions.
1. **High-power DC-DC converter**: IPB100N06S3L-03-VB is widely used in high-power DC-DC converters due to its low on-resistance and high current carrying capacity. This MOSFET can handle large currents and optimize conversion efficiency in high-efficiency power management modules, and is suitable for server power supplies, industrial power supplies, and battery management systems for electric vehicles.
2. **Electric vehicle motor drive**: In the motor control system of electric vehicles, the high current handling capability and low on-resistance of IPB100N06S3L-03-VB make it an ideal choice. This MOSFET can effectively manage the motor drive current, improve the overall efficiency and performance of electric vehicles, and ensure the smooth operation of the motor.
3. **High-frequency switching power supply**: In high-frequency switching power supply applications, such as communication equipment power supply and industrial equipment power supply, the low on-resistance and excellent switching performance of IPB100N06S3L-03-VB can reduce power loss and improve conversion efficiency. This makes it particularly suitable for power modules that require high-frequency switching operations.
4. **High-power LED driver**: In high-power LED lighting systems, IPB100N06S3L-03-VB can be used in LED drive circuits to provide stable current control and optimize the brightness and efficiency of LEDs. Its high current carrying capacity and low on-resistance help improve the overall performance and reliability of the lighting system.
In summary, IPB100N06S3L-03-VB MOSFET is widely used in high-power DC-DC converters, electric vehicle motor drives, high-frequency switching power supplies, and high-power LED drivers with its high current carrying capacity, low on-resistance and excellent switching performance, providing efficient and reliable power management solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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