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IPB100N06S3-04-VB Product details

Product introduction:

IPB100N06S3-04-VB Product Introduction

IPB100N06S3-04-VB is a high-performance N-type power MOSFET in TO263 package, designed for applications requiring high current and low on-resistance. With a maximum drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, the device is suitable for use in a variety of operating environments. Its threshold voltage (Vth) is 3V, combined with Trench technology to achieve lower on-resistance and efficient switching performance. The on-resistance of IPB100N06S3-04-VB is 12mΩ@VGS=4.5V and 3.2mΩ@VGS=10V, respectively, and it can carry a drain current of up to 210A, ensuring stability and high efficiency in high-power applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 60V 3V 210A 3.2mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 60V 3V 210A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 60V 3V 210A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
IPB100N06S3-04-VB Parameter Description

- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 12mΩ@VGS=4.5V
- 3.2mΩ@VGS=10V
- **Drain current (ID)**: 210A
- **Technology**: Trench technology

Domain and module applications:

Application fields and modules of IPB100N06S3-04-VB

The high current handling capability and low on-resistance of IPB100N06S3-04-VB make it widely used in multiple fields and modules:

1. **High-power power management**: In various high-power power management systems, such as industrial power supplies and server power modules, IPB100N06S3-04-VB provides stable power conversion, can withstand high current loads, optimize power conversion efficiency, reduce energy loss, and improve system performance.

2. **Electric vehicles and new energy vehicles**: This MOSFET performs well in the battery management system and powertrain of electric vehicles and hybrid vehicles. Its high current capability and low on-resistance help improve the power performance and energy efficiency of electric vehicles, and support efficient current control and power transmission.

3. **DC-DC Converters**: In DC-DC converters, the low on-resistance and high current handling capability of IPB100N06S3-04-VB ensure efficient power conversion, suitable for applications requiring high power output and high conversion efficiency, such as communication equipment, power systems, and consumer electronics.

4. **Power Tools and Industrial Drives**: In power tools and industrial automation equipment, the high current carrying capacity and efficient switching performance of IPB100N06S3-04-VB can support stable operation of equipment under high load conditions, suitable for motor drives and other applications requiring strong current control.

5. **Data Centers and Computer Power Supplies**: In data centers and computer power supply systems, the low on-resistance and high current capability provided by IPB100N06S3-04-VB can improve the efficiency of power management modules, reduce power consumption and heat dissipation, and improve the overall reliability and performance of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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