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IPB100N06S2L-05-VB Product details
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Product Introduction
**IPB100N06S2L-05-VB** is a high-efficiency N-Channel MOSFET in TO263 package based on advanced Trench technology. This MOSFET has high current carrying capacity and low on-resistance, can support current up to 210A, and has a maximum drain-source voltage of 60V. Its low conduction loss makes it very suitable for applications in power management, automotive electronics, and industrial control that require high efficiency and reliability.
**IPB100N06S2L-05-VB** is a high-efficiency N-Channel MOSFET in TO263 package based on advanced Trench technology. This MOSFET has high current carrying capacity and low on-resistance, can support current up to 210A, and has a maximum drain-source voltage of 60V. Its low conduction loss makes it very suitable for applications in power management, automotive electronics, and industrial control that require high efficiency and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | 3.2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 12mΩ (at VGS = 4.5V)
- 3.2mΩ (at VGS = 10V)
- **Maximum continuous current (ID)**: 210A
- **Technology**: Trench
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 12mΩ (at VGS = 4.5V)
- 3.2mΩ (at VGS = 10V)
- **Maximum continuous current (ID)**: 210A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules
1. **Electric vehicles and charging systems**:
In the field of electric vehicles, the high current carrying capacity and low on-resistance of **IPB100N06S2L-05-VB** are very suitable for motor drives, inverters and charging management systems. This MOSFET can efficiently manage high-current power transmission and reduce energy loss, helping to improve the overall efficiency and endurance of electric vehicles.
2. **High-efficiency DC-DC converters**:
This MOSFET is very suitable for use in a variety of high-efficiency DC-DC converters, especially in situations where high currents need to be handled. For example, in server and data center power supplies, **IPB100N06S2L-05-VB** can effectively reduce conduction losses, help improve power conversion efficiency and maintain high reliability of the system.
3. **Industrial automation equipment**:
In industrial automation equipment, the high current handling capability and low on-resistance of this MOSFET make it suitable for driving industrial motors and other high-power devices. Its efficient switching performance ensures stability and energy efficiency in frequent switching operations and high-power applications, such as in power management modules for robot control and production equipment.
4. **Solar Energy and Energy Storage Systems**:
In renewable energy applications, such as solar inverters and energy storage systems, **IPB100N06S2L-05-VB** can help optimize power transmission efficiency and reduce energy losses through its low RDS(ON) and high current capability. It can be used in high-power power conversion and management systems to help improve the energy efficiency of solar energy and energy storage systems.
1. **Electric vehicles and charging systems**:
In the field of electric vehicles, the high current carrying capacity and low on-resistance of **IPB100N06S2L-05-VB** are very suitable for motor drives, inverters and charging management systems. This MOSFET can efficiently manage high-current power transmission and reduce energy loss, helping to improve the overall efficiency and endurance of electric vehicles.
2. **High-efficiency DC-DC converters**:
This MOSFET is very suitable for use in a variety of high-efficiency DC-DC converters, especially in situations where high currents need to be handled. For example, in server and data center power supplies, **IPB100N06S2L-05-VB** can effectively reduce conduction losses, help improve power conversion efficiency and maintain high reliability of the system.
3. **Industrial automation equipment**:
In industrial automation equipment, the high current handling capability and low on-resistance of this MOSFET make it suitable for driving industrial motors and other high-power devices. Its efficient switching performance ensures stability and energy efficiency in frequent switching operations and high-power applications, such as in power management modules for robot control and production equipment.
4. **Solar Energy and Energy Storage Systems**:
In renewable energy applications, such as solar inverters and energy storage systems, **IPB100N06S2L-05-VB** can help optimize power transmission efficiency and reduce energy losses through its low RDS(ON) and high current capability. It can be used in high-power power conversion and management systems to help improve the energy efficiency of solar energy and energy storage systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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