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IPB100N06S2-05-VB Product details
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IPB100N06S2-05-VB is a high-efficiency N-channel MOSFET in TO263 package, designed to handle high current and low on-resistance applications. Its drain-source voltage (VDS) is 60V, the drain current (ID) is up to 150A, and the on-resistance (RDS(ON)) is only 4mΩ at VGS=10V. Based on advanced Trench technology, this MOSFET has excellent switching characteristics and heat dissipation performance. It is suitable for various power conversion, automotive electronics and industrial control fields, providing stable and reliable solutions for high-efficiency applications.
**IPB100N06S2-05-VB
IPB100N06S2-05-VB is a high-efficiency N-channel MOSFET in TO263 package, designed to handle high current and low on-resistance applications. Its drain-source voltage (VDS) is 60V, the drain current (ID) is up to 150A, and the on-resistance (RDS(ON)) is only 4mΩ at VGS=10V. Based on advanced Trench technology, this MOSFET has excellent switching characteristics and heat dissipation performance. It is suitable for various power conversion, automotive electronics and industrial control fields, providing stable and reliable solutions for high-efficiency applications.
**IPB100N06S2-05-VB
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
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- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage(VDS)**: 60V
- **Gate-source voltage(VGS)**: ±20V
- **Threshold voltage(Vth)**: 3V
- **On-resistance(RDS(ON))**: 4mΩ @ VGS=10V
- **Drain current(ID)**: 150A
- **Technology**: Trench
**
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage(VDS)**: 60V
- **Gate-source voltage(VGS)**: ±20V
- **Threshold voltage(Vth)**: 3V
- **On-resistance(RDS(ON))**: 4mΩ @ VGS=10V
- **Drain current(ID)**: 150A
- **Technology**: Trench
**
Domain and module applications：
1. **High-efficiency power management**
IPB100N06S2-05-VB is suitable for high-efficiency power management systems such as DC-DC converters and switching power supplies (SMPS). Its low on-resistance reduces power consumption and can improve power conversion efficiency, so it is widely used in power modules of data center power supplies and servers to ensure stable and efficient operation of the power system.
2. **Automotive electronic systems**
In electric vehicles and hybrid vehicles, IPB100N06S2-05-VB is often used in battery management systems (BMS) and on-board chargers (OBC). Its high current handling capability and low on-resistance improve the charging efficiency of the system while reducing energy loss, helping to improve the overall performance of electric vehicles.
3. **Industrial motor control**
This MOSFET is also very suitable for industrial motor drive systems. It can handle the high current requirements of high-power motors and supports efficient motor drive and control. It is especially suitable for motor control modules in industrial automation equipment to ensure efficient and stable operation.
4. **Renewable Energy Systems**
In the field of renewable energy such as solar and wind power, IPB100N06S2-05-VB can be used in inverters and battery energy storage systems to help convert and manage energy. Its high current capability and efficient power conversion capabilities ensure high reliability and high efficiency of these systems, further promoting the development of green energy technology.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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