IPB100N04S4-03D-VB Product details
Product introduction:
The IPB100N04S4-03D-VB is a high-performance N-channel MOSFET in a TO263 package, designed for high current, high efficiency applications. It uses Trench technology to provide extremely low on-resistance (RDS(ON)) and high switching efficiency, making it an excellent performer in applications requiring fast switching and low losses. The device is capable of withstanding drain-source voltages up to 40V, making it suitable for a variety of power management and power conversion applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate drive voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 2.5mΩ @ VGS=4.5V, 2mΩ @ VGS=10V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench technology
Domain and module applications:
1. **Automotive electronics**: The IPB100N04S4-03D-VB is ideal for applications such as battery management systems (BMS), motor control modules, and on-board chargers in electric and hybrid vehicles. Its high current capability and low on-resistance ensure efficient power transmission, optimize energy utilization efficiency, and improve the reliability and performance of automotive electrical systems.
2. **Power management and conversion**: This MOSFET can be used in high-efficiency DC-DC converters, point-of-load conversion (POL) modules, and uninterruptible power supply (UPS) systems. Its low on-resistance and high switching speed enable it to effectively reduce losses in power conversion applications, ensuring high efficiency and stability of the power supply.
3. **Industrial control and automation**: In industrial applications, the IPB100N04S4-03D-VB can be used in motor drives, inverters, and power control modules. Its high current handling capability and excellent electrical performance enable it to cope with complex industrial control environments and improve the efficiency and durability of equipment.
4. **Consumer Electronics**: IPB100N04S4-03D-VB can also be used in power management modules for laptops, power adapters, servers, and other consumer electronics. It can provide efficient power regulation, reduce power consumption, and improve overall performance and endurance of the device.
In general, IPB100N04S4-03D-VB has a wide range of application scenarios, especially suitable for fields that require high current, efficient switching, and low conduction losses.
Technical support:
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