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IPB100N04S3-VB Product details
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Product Introduction
IPB100N04S3-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high current and medium voltage applications. Its maximum drain-source voltage (VDS) is 40V and its maximum on-current (ID) is 150A, which is suitable for high-power current management and power conversion scenarios. The on-resistance of the device is very low, 2.5mΩ at a gate drive voltage of 4.5V and only 2mΩ at 10V, reflecting the advantage of low conduction loss. Using advanced trench technology, the MOSFET has excellent switching performance and efficient current handling capability.
IPB100N04S3-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high current and medium voltage applications. Its maximum drain-source voltage (VDS) is 40V and its maximum on-current (ID) is 150A, which is suitable for high-power current management and power conversion scenarios. The on-resistance of the device is very low, 2.5mΩ at a gate drive voltage of 4.5V and only 2mΩ at 10V, reflecting the advantage of low conduction loss. Using advanced trench technology, the MOSFET has excellent switching performance and efficient current handling capability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- @ VGS = 4.5V: 2.5mΩ
- @ VGS = 10V: 2mΩ
- **Maximum on-current (ID)**: 150A
- **Technology type**: Trench
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- @ VGS = 4.5V: 2.5mΩ
- @ VGS = 10V: 2mΩ
- **Maximum on-current (ID)**: 150A
- **Technology type**: Trench
Domain and module applications：
Application areas and module examples: IPB100N04S3-VB MOSFET is widely used in high-efficiency power management systems and power conversion modules due to its low on-resistance and high current handling capability. First, in DC-DC converter applications in automotive electronics, this MOSFET can effectively handle high currents, reduce power losses, and improve system efficiency. Secondly, the device is also suitable for switching power supplies (SMPS), which can provide a stable current supply while reducing energy consumption and heat generation, and is particularly suitable for high-density power supply designs. In addition, this MOSFET is also widely used in industrial motor control and battery management systems (BMS), especially for scenarios that need to handle high current and high power. Its high-efficiency switching characteristics make it an ideal choice for various types of high-power electronic devices and high-efficiency power management modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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