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IPB100N04S3-03-VB Product details
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1. Product Introduction
IPB100N04S3-03-VB is a high-performance single N-channel MOSFET in TO263 package with excellent conduction performance and high current handling capability. The device has a drain-source voltage (VDS) of 40V, a gate voltage (VGS) of ±20V, and a turn-on voltage (Vth) of 3V. The on-resistance (RDS(ON)) is 2.5mΩ@VGS=4.5V and 2mΩ@VGS=10V, and can withstand currents up to 150A. Based on advanced trench technology, this MOSFET is suitable for high-efficiency power management and drive applications, with low power consumption and high efficiency.
IPB100N04S3-03-VB is a high-performance single N-channel MOSFET in TO263 package with excellent conduction performance and high current handling capability. The device has a drain-source voltage (VDS) of 40V, a gate voltage (VGS) of ±20V, and a turn-on voltage (Vth) of 3V. The on-resistance (RDS(ON)) is 2.5mΩ@VGS=4.5V and 2mΩ@VGS=10V, and can withstand currents up to 150A. Based on advanced trench technology, this MOSFET is suitable for high-efficiency power management and drive applications, with low power consumption and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 40V
- **Gate voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2.5mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Drain current (ID)**: 150A
- **Technology**: Trench technology
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 40V
- **Gate voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2.5mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Drain current (ID)**: 150A
- **Technology**: Trench technology
Domain and module applications：
III. Application fields and module examples
1. **DC-DC converter**: IPB100N04S3-03-VB is very suitable for use in high-efficiency DC-DC converters. Due to its low on-resistance and high current handling capability, this MOSFET can effectively reduce energy loss during the conversion process and improve overall power efficiency. It is suitable for industrial equipment, telecommunications equipment and computer systems.
2. **Electric vehicle battery management system (BMS)**: In the battery management system of electric vehicles, this MOSFET can handle higher currents and ensure stable operation in different voltage ranges, effectively improving the life and efficiency of the battery system.
3. **Switch mode power supply (SMPS)**: This device performs well in high-efficiency switch mode power supplies, can support fast switching speeds and low-loss operation, and is suitable for high-power power conversion scenarios such as server power supplies and adapters.
4. **Load switch and motor drive**: IPB100N04S3-03-VB can be used in load switches and motor drive modules in automobiles and industries. Its high current handling capability and low power consumption are suitable for applications that require high power output and high efficiency, such as power tools and motor control systems.
IPB100N04S3-03-VB has a wide range of applications in power management, automotive electronics and industrial control due to its high current carrying capacity, low on-resistance and efficient power conversion capability, which can improve system efficiency and reduce power loss.
1. **DC-DC converter**: IPB100N04S3-03-VB is very suitable for use in high-efficiency DC-DC converters. Due to its low on-resistance and high current handling capability, this MOSFET can effectively reduce energy loss during the conversion process and improve overall power efficiency. It is suitable for industrial equipment, telecommunications equipment and computer systems.
2. **Electric vehicle battery management system (BMS)**: In the battery management system of electric vehicles, this MOSFET can handle higher currents and ensure stable operation in different voltage ranges, effectively improving the life and efficiency of the battery system.
3. **Switch mode power supply (SMPS)**: This device performs well in high-efficiency switch mode power supplies, can support fast switching speeds and low-loss operation, and is suitable for high-power power conversion scenarios such as server power supplies and adapters.
4. **Load switch and motor drive**: IPB100N04S3-03-VB can be used in load switches and motor drive modules in automobiles and industries. Its high current handling capability and low power consumption are suitable for applications that require high power output and high efficiency, such as power tools and motor control systems.
IPB100N04S3-03-VB has a wide range of applications in power management, automotive electronics and industrial control due to its high current carrying capacity, low on-resistance and efficient power conversion capability, which can improve system efficiency and reduce power loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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