IPB100N04S2L-03-VB Product details
Product introduction:
IPB100N04S2L-03-VB is a high-performance single N-channel MOSFET in TO263 package, suitable for low-voltage and high-current applications. Its drain-source voltage (VDS) is 40V, which can withstand medium voltage, while its low on-resistance (RDS(ON)) and high current handling capability make it very suitable for occasions requiring efficient power management. IPB100N04S2L-03-VB adopts advanced Trench technology, which not only provides excellent switching speed, but also greatly reduces conduction loss and heat generation, suitable for automotive electronics, power management and other high-performance electronic module applications.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2.5mΩ@VGS=4.5V
- 2mΩ@VGS=10V
- **Drain current (ID)**: 150A
- **Technology**: Trench technology, providing efficient switching performance and low conduction loss
- **Thermal resistance (Rth(ja))**: Typical value is 62 K/W
Domain and module applications:
1. **Battery management system for electric vehicles (EVs)**: IPB100N04S2L-03-VB is very suitable for battery management systems (BMS) in electric and hybrid vehicles. Its low on-resistance and high current capability enable it to provide efficient current conduction during the charge and discharge cycle, while reducing energy loss and improving the vehicle's endurance performance.
2. **Switching mode power supplies (SMPS) and DC-DC converters**: The device is particularly suitable for use in switching mode power supplies (SMPS) and DC-DC converters. Its low RDS(ON) and high current carrying capacity help reduce switching losses and improve the system's energy efficiency, making it very suitable for use in high-power power modules.
3. **Automotive electronic control unit (ECU)**: In automotive electronic control units, IPB100N04S2L-03-VB provides high-efficiency and reliable current conduction, and is suitable for use in modules that require fast response and high power, such as fuel pump control, electric steering systems, and electric window control.
4. **Motor control system**: Due to its high current handling capability and low loss characteristics, this MOSFET is suitable for motor control systems in the industrial and automotive fields. Whether in motor drives in automated production lines or in drive motors in electric vehicles, the IPB100N04S2L-03-VB can provide reliable performance and ensure efficient operation of the system.
5. **Power management for servers and data centers**: In high-density power management in data centers and servers, this device can effectively cope with high-power load requirements, ensure the stability and high efficiency of power modules, and is suitable for power regulators and load distribution modules.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image