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IPB100N04S2-04-VB Product details
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1. Product Introduction
**IPB100N04S2-04-VB** is a single N-channel MOSFET in a TO263 package. Designed to handle high current and low on-resistance applications, the device features a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) of ±20V. The on-resistance of the MOSFET is 2.5mΩ at a gate-source voltage of 4.5V and 2mΩ at 10V, capable of supporting a drain current (ID) of up to 150A. Using advanced Trench technology, the device excels in high-power and high-frequency applications, and is suitable for a variety of power-intensive applications.
**IPB100N04S2-04-VB** is a single N-channel MOSFET in a TO263 package. Designed to handle high current and low on-resistance applications, the device features a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) of ±20V. The on-resistance of the MOSFET is 2.5mΩ at a gate-source voltage of 4.5V and 2mΩ at 10V, capable of supporting a drain current (ID) of up to 150A. Using advanced Trench technology, the device excels in high-power and high-frequency applications, and is suitable for a variety of power-intensive applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description
- **Model**: IPB100N04S2-04-VB
- **Package**: TO263
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2.5mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Continuous drain current (ID)**: 150A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 175°C
- **Switching time**: Suitable for high frequency operation
- **Gate charge (Qg)**: Provides efficient switching capability, especially suitable for high frequency applications
- **Model**: IPB100N04S2-04-VB
- **Package**: TO263
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2.5mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Continuous drain current (ID)**: 150A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 175°C
- **Switching time**: Suitable for high frequency operation
- **Gate charge (Qg)**: Provides efficient switching capability, especially suitable for high frequency applications
Domain and module applications：
3. Application fields and modules
**IPB100N04S2-04-VB** MOSFET has excellent current handling capability and low on-resistance, and performs well in multiple industry applications. Here are some typical application fields and modules:
- **Power management**: This MOSFET can be used in applications such as DC-DC converters and power regulators, with low conduction losses and high current handling capabilities. It is particularly suitable for high power density devices such as power adapters and server power supplies in the industrial and consumer electronics fields.
- **Electric Vehicle (EV)**: Suitable for battery management systems (BMS) and electric drive systems in electric vehicles for efficient current control and energy transmission. Low on-resistance makes it suitable for minimizing power consumption in applications such as motor controllers and inverters.
- **Motor drive**: In systems that require high power and low loss, such as industrial automation and robots, IPB100N04S2-04-VB can provide stable current and efficient power management for motor drive modules to ensure smooth operation of the equipment.
- **Uninterruptible Power Supply (UPS)**: In UPS systems, this MOSFET is used to control high current transmission, improve system efficiency, and provide stable power output, especially in high-power intensive application scenarios.
- **Consumer Electronics Devices**: Due to its low power consumption and high efficiency, this MOSFET can be used in high-efficiency charging devices and power modules to reduce power loss and extend battery life.
In short, **IPB100N04S2-04-VB** is very suitable for scenarios that require high efficiency and high power handling with its low on-resistance and high current handling capability, improving the overall performance and reliability of the system.
**IPB100N04S2-04-VB** MOSFET has excellent current handling capability and low on-resistance, and performs well in multiple industry applications. Here are some typical application fields and modules:
- **Power management**: This MOSFET can be used in applications such as DC-DC converters and power regulators, with low conduction losses and high current handling capabilities. It is particularly suitable for high power density devices such as power adapters and server power supplies in the industrial and consumer electronics fields.
- **Electric Vehicle (EV)**: Suitable for battery management systems (BMS) and electric drive systems in electric vehicles for efficient current control and energy transmission. Low on-resistance makes it suitable for minimizing power consumption in applications such as motor controllers and inverters.
- **Motor drive**: In systems that require high power and low loss, such as industrial automation and robots, IPB100N04S2-04-VB can provide stable current and efficient power management for motor drive modules to ensure smooth operation of the equipment.
- **Uninterruptible Power Supply (UPS)**: In UPS systems, this MOSFET is used to control high current transmission, improve system efficiency, and provide stable power output, especially in high-power intensive application scenarios.
- **Consumer Electronics Devices**: Due to its low power consumption and high efficiency, this MOSFET can be used in high-efficiency charging devices and power modules to reduce power loss and extend battery life.
In short, **IPB100N04S2-04-VB** is very suitable for scenarios that require high efficiency and high power handling with its low on-resistance and high current handling capability, improving the overall performance and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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