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IPB09N03LA G-VB Product details

Product introduction:

1. Product Introduction of IPB09N03LA G-VB MOSFET

IPB09N03LA G-VB is a high-performance N-channel power MOSFET in TO-263 package, designed for high-efficiency switching and current handling applications. With a drain-source voltage (VDS) of 30V, it can carry a continuous drain current of up to 70A, suitable for applications requiring high efficiency and low power consumption. This MOSFET adopts advanced trench technology (Trench), has low on-resistance, and can show excellent conduction performance even at low gate voltage, suitable for a variety of power management and high-efficiency conversion applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 30V 1.7V 70A 6mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 30V 1.7V 70A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 30V 1.7V 70A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
2. Detailed parameter description of IPB09N03LA G-VB MOSFET

- **Package type**: TO-263
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 8mΩ @ VGS=4.5V
- 6mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 70A
- **Technology**: Trench technology

Domain and module applications:

III. Application fields and module examples of IPB09N03LA G-VB

1. **Power management system**: IPB09N03LA G-VB is widely used in power management modules, especially for power conversion systems that require high efficiency and low loss. For example, it can be used in DC-DC converters of laptops, smartphones and other portable devices to help improve power conversion efficiency and reduce heat.

2. **Power tool controller**: Due to the high current handling capability and low on-resistance of this MOSFET, IPB09N03LA G-VB is suitable for use in motor drive modules of power tools. These tools require powerful switching elements to manage high power output, and the efficient switching performance of this MOSFET ensures smooth operation of the motor.

3. **Electric vehicles and hybrid vehicles**: In the battery management system and power control module of electric vehicles, IPB09N03LA G-VB can effectively manage the charging and discharging process of the battery due to its low on-resistance and high switching efficiency, thereby improving the energy efficiency of the entire vehicle.

4. **LED lighting system**: In high-efficiency LED driver circuits, IPB09N03LA G-VB MOSFET can be used to regulate current, ensuring that LED lamps can operate at high efficiency and low power consumption. This makes it an ideal choice for smart lighting systems and commercial lighting equipment.

In general, IPB09N03LA G-VB MOSFET is widely used in power management, power tools, electric vehicles, LED lighting and other fields and modules with its low on-resistance, high current carrying capacity and excellent switching performance, providing efficient and stable current control and conversion solutions for these systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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