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IPB097N08N3 G-VB Product details
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IPB097N08N3 G-VB Product Introduction
IPB097N08N3 G-VB is a high-performance N-type power MOSFET in TO263 package, designed for high current and high efficiency applications. The device has a maximum drain-source voltage (VDS) of 80V and a gate-source voltage (VGS) of ±20V, ensuring its reliability under various operating conditions. The MOSFET has a threshold voltage of 3V and an on-resistance as low as 6mΩ@VGS=10V and 10mΩ@VGS=4.5V, supporting high current conduction with a maximum drain current (ID) of 120A. The use of Trench technology provides lower conduction losses and faster switching speeds, making it ideal for applications requiring efficient power conversion.
IPB097N08N3 G-VB is a high-performance N-type power MOSFET in TO263 package, designed for high current and high efficiency applications. The device has a maximum drain-source voltage (VDS) of 80V and a gate-source voltage (VGS) of ±20V, ensuring its reliability under various operating conditions. The MOSFET has a threshold voltage of 3V and an on-resistance as low as 6mΩ@VGS=10V and 10mΩ@VGS=4.5V, supporting high current conduction with a maximum drain current (ID) of 120A. The use of Trench technology provides lower conduction losses and faster switching speeds, making it ideal for applications requiring efficient power conversion.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
IPB097N08N3 G-VB parameter description
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ@VGS=4.5V
- 6mΩ@VGS=10V
- **Drain current (ID)**: 120A
- **Technology**: Trench technology
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ@VGS=4.5V
- 6mΩ@VGS=10V
- **Drain current (ID)**: 120A
- **Technology**: Trench technology
Domain and module applications：
Application fields and modules of IPB097N08N3 G-VB
IPB097N08N3 G-VB has high current handling capability and low on-resistance, and is widely used in the following fields:
1. **Electric vehicles and automotive electrical systems**: In electric vehicles and modern automotive electronics, IPB097N08N3 G-VB can be used in applications such as battery management systems, powertrains, and on-board chargers to provide stable current conduction and efficient power conversion, ensuring high performance and reliability of vehicle systems.
2. **Switching power supplies and DC-DC converters**: The high efficiency and low on-resistance characteristics of this MOSFET make it excellent in switching power supplies (SMPS) and DC-DC converters, especially in situations where fast switching and high power output are required, which can improve power conversion efficiency and reduce energy loss.
3. **Power Tools and Industrial Control**: In power tools, industrial automation equipment, and motor control systems, the IPB097N08N3 G-VB provides strong current handling capabilities and high-efficiency switching, and can provide stable performance under high loads, suitable for high-power applications such as motor drives and automation control modules.
4. **Data Center and Server Power Management**: In data centers, servers, and storage devices, this MOSFET is used in power management modules to help improve power conversion efficiency, reduce equipment power consumption, and reduce heat generation, thereby improving overall system reliability and energy efficiency.
5. **Solar Inverters and Renewable Energy Systems**: In renewable energy fields such as solar inverters and wind power systems, the IPB097N08N3 G-VB can be used in power conversion modules to help improve the system's power conversion efficiency, reduce conversion losses, and enhance energy utilization.
IPB097N08N3 G-VB has high current handling capability and low on-resistance, and is widely used in the following fields:
1. **Electric vehicles and automotive electrical systems**: In electric vehicles and modern automotive electronics, IPB097N08N3 G-VB can be used in applications such as battery management systems, powertrains, and on-board chargers to provide stable current conduction and efficient power conversion, ensuring high performance and reliability of vehicle systems.
2. **Switching power supplies and DC-DC converters**: The high efficiency and low on-resistance characteristics of this MOSFET make it excellent in switching power supplies (SMPS) and DC-DC converters, especially in situations where fast switching and high power output are required, which can improve power conversion efficiency and reduce energy loss.
3. **Power Tools and Industrial Control**: In power tools, industrial automation equipment, and motor control systems, the IPB097N08N3 G-VB provides strong current handling capabilities and high-efficiency switching, and can provide stable performance under high loads, suitable for high-power applications such as motor drives and automation control modules.
4. **Data Center and Server Power Management**: In data centers, servers, and storage devices, this MOSFET is used in power management modules to help improve power conversion efficiency, reduce equipment power consumption, and reduce heat generation, thereby improving overall system reliability and energy efficiency.
5. **Solar Inverters and Renewable Energy Systems**: In renewable energy fields such as solar inverters and wind power systems, the IPB097N08N3 G-VB can be used in power conversion modules to help improve the system's power conversion efficiency, reduce conversion losses, and enhance energy utilization.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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