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IPB093N04L G-VB Product details
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Product Introduction
**IPB093N04L G-VB** is a high-performance N-Channel MOSFET in TO263 package and manufactured based on advanced Trench technology. This MOSFET is known for its extremely low on-resistance and excellent current handling capability, suitable for a variety of high-performance and high-reliability applications. Its maximum drain-source voltage is 40V and supports up to 100A of continuous current, making it very suitable for high-power switching and power management applications.
**IPB093N04L G-VB** is a high-performance N-Channel MOSFET in TO263 package and manufactured based on advanced Trench technology. This MOSFET is known for its extremely low on-resistance and excellent current handling capability, suitable for a variety of high-performance and high-reliability applications. Its maximum drain-source voltage is 40V and supports up to 100A of continuous current, making it very suitable for high-power switching and power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ (at VGS = 4.5V)
- 5mΩ (at VGS = 10V)
- **Maximum continuous current (ID)**: 100A
- **Technology**: Trench
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ (at VGS = 4.5V)
- 5mΩ (at VGS = 10V)
- **Maximum continuous current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules
1. **Power management system**:
In power management systems, **IPB093N04L G-VB**'s low RDS(ON) characteristics and high current carrying capacity make it very suitable for DC-DC converters and power switch modules. Its low power consumption and high efficiency help improve power conversion efficiency and reduce power consumption and heat generation in the system.
2. **Electric vehicles**:
In electric vehicle applications, the high current handling capability and low on-resistance of this MOSFET make it an ideal choice for battery management systems and motor control modules. For example, it can be used in battery protection switches and motor drive systems to provide efficient and reliable power control to ensure stable operation of the system.
3. **Industrial control systems**:
In industrial automation and control systems, **IPB093N04L G-VB** can be used to drive a variety of industrial equipment and motors. Its high current capability and low on-resistance ensure stable operation under high power conditions, improving the overall efficiency and safety of the equipment.
4. **High Power Switching Application**:
For applications that require high power switching, such as power amplifiers and load control, **IPB093N04L G-VB**'s low on-resistance and high current carrying capacity enable it to effectively control large current loads and keep power consumption low. This makes it excel in high power switching applications and is suitable for occasions that require high-frequency switching operations.
1. **Power management system**:
In power management systems, **IPB093N04L G-VB**'s low RDS(ON) characteristics and high current carrying capacity make it very suitable for DC-DC converters and power switch modules. Its low power consumption and high efficiency help improve power conversion efficiency and reduce power consumption and heat generation in the system.
2. **Electric vehicles**:
In electric vehicle applications, the high current handling capability and low on-resistance of this MOSFET make it an ideal choice for battery management systems and motor control modules. For example, it can be used in battery protection switches and motor drive systems to provide efficient and reliable power control to ensure stable operation of the system.
3. **Industrial control systems**:
In industrial automation and control systems, **IPB093N04L G-VB** can be used to drive a variety of industrial equipment and motors. Its high current capability and low on-resistance ensure stable operation under high power conditions, improving the overall efficiency and safety of the equipment.
4. **High Power Switching Application**:
For applications that require high power switching, such as power amplifiers and load control, **IPB093N04L G-VB**'s low on-resistance and high current carrying capacity enable it to effectively control large current loads and keep power consumption low. This makes it excel in high power switching applications and is suitable for occasions that require high-frequency switching operations.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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