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IPB091N06N G-VB Product details
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**
IPB091N06N G-VB is a high-performance N-channel MOSFET in TO263 package, designed for high current and low on-resistance applications. Its drain-source voltage (VDS) is 60V and can handle drain current (ID) up to 150A. The on-resistance of this MOSFET is 4mΩ at VGS=10V, and it uses advanced Trench technology to optimize switching characteristics and thermal management. This makes IPB091N06N G-VB an ideal choice for high-efficiency power management and power conversion systems.
**IPB091N06N G-VB
IPB091N06N G-VB is a high-performance N-channel MOSFET in TO263 package, designed for high current and low on-resistance applications. Its drain-source voltage (VDS) is 60V and can handle drain current (ID) up to 150A. The on-resistance of this MOSFET is 4mΩ at VGS=10V, and it uses advanced Trench technology to optimize switching characteristics and thermal management. This makes IPB091N06N G-VB an ideal choice for high-efficiency power management and power conversion systems.
**IPB091N06N G-VB
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
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- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS=10V
- **Drain current (ID)**: 150A
- **Technology**: Trench
*Performance.
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS=10V
- **Drain current (ID)**: 150A
- **Technology**: Trench
*Performance.
Domain and module applications：
*Application fields and module description**
1. **High-efficiency power converter**
The IPB091N06N G-VB is ideal for high-efficiency power converters such as DC-DC converters and switching power supplies (SMPS). Its low on-resistance can significantly reduce power loss and improve conversion efficiency. It is widely used in power modules for data centers, communication equipment, and servers to ensure stable and efficient operation of the system.
2. **Electric vehicle (EV) charging system**
In the electric vehicle charging system, the IPB091N06N G-VB can effectively handle high current loads and provide low power consumption and high-efficiency switching control. Its high current capability and low on-resistance make it suitable for battery management systems (BMS) and on-board chargers (OBC), improving electric vehicle charging efficiency and system reliability.
3. **Industrial motor drive**
This MOSFET performs well in industrial motor drive applications, especially in scenarios that require high current handling and fast switching. IPB091N06N G-VB can drive high-power motors and support motor control in industrial automation equipment, providing high efficiency and stable operation.
4. **Uninterruptible Power Supply (UPS)**
In an uninterruptible power supply (UPS) system, IPB091N06N G-VB can efficiently handle high current loads, ensuring that the system provides stable backup power when power is interrupted. Its low on-resistance and high current handling capability reduce energy loss and improve the overall efficiency and reliability of the UPS system.
1. **High-efficiency power converter**
The IPB091N06N G-VB is ideal for high-efficiency power converters such as DC-DC converters and switching power supplies (SMPS). Its low on-resistance can significantly reduce power loss and improve conversion efficiency. It is widely used in power modules for data centers, communication equipment, and servers to ensure stable and efficient operation of the system.
2. **Electric vehicle (EV) charging system**
In the electric vehicle charging system, the IPB091N06N G-VB can effectively handle high current loads and provide low power consumption and high-efficiency switching control. Its high current capability and low on-resistance make it suitable for battery management systems (BMS) and on-board chargers (OBC), improving electric vehicle charging efficiency and system reliability.
3. **Industrial motor drive**
This MOSFET performs well in industrial motor drive applications, especially in scenarios that require high current handling and fast switching. IPB091N06N G-VB can drive high-power motors and support motor control in industrial automation equipment, providing high efficiency and stable operation.
4. **Uninterruptible Power Supply (UPS)**
In an uninterruptible power supply (UPS) system, IPB091N06N G-VB can efficiently handle high current loads, ensuring that the system provides stable backup power when power is interrupted. Its low on-resistance and high current handling capability reduce energy loss and improve the overall efficiency and reliability of the UPS system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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