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IPB090N06N3 G-VB Product details
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IPB090N06N3 G-VB Product Introduction
IPB090N06N3 G-VB is a high-performance N-channel MOSFET in TO263 package, designed for high voltage and high current applications. It can withstand drain-source voltage up to 60V, combined with Trench technology, with low on-resistance (RDS(ON)) and low turn-on threshold voltage. This MOSFET is designed for applications requiring efficient power management and stable performance, which can effectively reduce power consumption and improve overall system efficiency.
IPB090N06N3 G-VB is a high-performance N-channel MOSFET in TO263 package, designed for high voltage and high current applications. It can withstand drain-source voltage up to 60V, combined with Trench technology, with low on-resistance (RDS(ON)) and low turn-on threshold voltage. This MOSFET is designed for applications requiring efficient power management and stable performance, which can effectively reduce power consumption and improve overall system efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 11mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
IPB090N06N3 G-VB Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate drive voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 12mΩ @ VGS=4.5V, 11mΩ @ VGS=10V
- **Maximum drain current (ID)**: 75A
- **Technology**: Trench technology
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate drive voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 12mΩ @ VGS=4.5V, 11mΩ @ VGS=10V
- **Maximum drain current (ID)**: 75A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **Power management systems**: The IPB090N06N3 G-VB is suitable for power converters and point-of-load (POL) modules. In these applications, the low on-resistance and high current capability of the MOSFET enable it to provide efficient power conversion, reduce power consumption and improve the overall efficiency of the system.
2. **Consumer electronics**: This MOSFET can be used in power regulation and management modules in high-end consumer electronic devices such as laptops, smartphones and game consoles. Its efficient power switching function helps improve the performance and battery life of the device while reducing energy losses.
3. **Automotive electronics**: In automotive electronic systems, such as battery management systems (BMS) and motor control modules in electric vehicles, the IPB090N06N3 G-VB provides reliable power control. Its high current handling capability and low on-resistance ensure efficient operation and stability of automotive systems.
4. **Industrial Application**: This MOSFET is suitable for industrial control and motor drive applications, including power management systems, inverters, and other power switching applications. The high current capability and low power consumption of the IPB090N06N3 G-VB make it an excellent choice in industrial environments that require high performance and stability.
With its excellent electrical performance and wide applicability, the IPB090N06N3 G-VB is an ideal choice for high-power, high-efficiency applications.
1. **Power management systems**: The IPB090N06N3 G-VB is suitable for power converters and point-of-load (POL) modules. In these applications, the low on-resistance and high current capability of the MOSFET enable it to provide efficient power conversion, reduce power consumption and improve the overall efficiency of the system.
2. **Consumer electronics**: This MOSFET can be used in power regulation and management modules in high-end consumer electronic devices such as laptops, smartphones and game consoles. Its efficient power switching function helps improve the performance and battery life of the device while reducing energy losses.
3. **Automotive electronics**: In automotive electronic systems, such as battery management systems (BMS) and motor control modules in electric vehicles, the IPB090N06N3 G-VB provides reliable power control. Its high current handling capability and low on-resistance ensure efficient operation and stability of automotive systems.
4. **Industrial Application**: This MOSFET is suitable for industrial control and motor drive applications, including power management systems, inverters, and other power switching applications. The high current capability and low power consumption of the IPB090N06N3 G-VB make it an excellent choice in industrial environments that require high performance and stability.
With its excellent electrical performance and wide applicability, the IPB090N06N3 G-VB is an ideal choice for high-power, high-efficiency applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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