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IPB08CNE8N G-VB Product details
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Product Introduction
IPB08CNE8N G-VB is a high-performance single N-channel MOSFET in TO263 package, designed for medium-to-high voltage and high current applications. The MOSFET has a maximum drain-source voltage (VDS) of 80V and a maximum on-current (ID) of 120A. Its on-resistance is 10mΩ at a gate drive voltage of 4.5V and 6mΩ at a gate drive voltage of 10V, showing its excellent low power consumption characteristics. The device uses advanced trench technology (Trench), providing efficient switching performance and low power operation, suitable for application scenarios requiring high current and high voltage.
IPB08CNE8N G-VB is a high-performance single N-channel MOSFET in TO263 package, designed for medium-to-high voltage and high current applications. The MOSFET has a maximum drain-source voltage (VDS) of 80V and a maximum on-current (ID) of 120A. Its on-resistance is 10mΩ at a gate drive voltage of 4.5V and 6mΩ at a gate drive voltage of 10V, showing its excellent low power consumption characteristics. The device uses advanced trench technology (Trench), providing efficient switching performance and low power operation, suitable for application scenarios requiring high current and high voltage.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- @ VGS = 4.5V: 10mΩ
- @ VGS = 10V: 6mΩ
- **Maximum on-current (ID)**: 120A
- **Technology type**: Trench
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- @ VGS = 4.5V: 10mΩ
- @ VGS = 10V: 6mΩ
- **Maximum on-current (ID)**: 120A
- **Technology type**: Trench
Domain and module applications：
Application fields and module examples: The high voltage and high current handling capabilities of the IPB08CNE8N G-VB MOSFET make it very useful in multiple fields and modules. First, it performs well in high-power power conversion modules such as DC-DC converters, which can efficiently manage current and reduce power losses, improving the overall efficiency of the system. Secondly, in switching power supplies (SMPS), the low on-resistance and high current carrying capacity of this MOSFET can ensure a stable power supply, especially in applications with high power requirements. In addition, it also plays an important role in the battery management system (BMS) of electric vehicles, providing reliable current control under high voltage and high current conditions to ensure the safety and stability of the system. Due to its excellent performance, this MOSFET is also suitable for a variety of high-power and high-efficiency electronic devices and power management systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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