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IPB085N06L G-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
IPB085N06L G-VB is a high-performance single N-channel MOSFET in TO263 package. With a drain-source voltage (VDS) of 60V and a gate voltage (VGS) of ±20V, this MOSFET is suitable for high-current, high-efficiency applications. Its turn-on voltage (Vth) is 3V, and its on-resistance (RDS(ON)) is 4mΩ@VGS=10V, and it can withstand a drain current (ID) of up to 150A. Based on Trench technology, IPB085N06L G-VB provides excellent conduction performance and low power consumption, and is suitable for high-power and high-efficiency electronic systems.
IPB085N06L G-VB is a high-performance single N-channel MOSFET in TO263 package. With a drain-source voltage (VDS) of 60V and a gate voltage (VGS) of ±20V, this MOSFET is suitable for high-current, high-efficiency applications. Its turn-on voltage (Vth) is 3V, and its on-resistance (RDS(ON)) is 4mΩ@VGS=10V, and it can withstand a drain current (ID) of up to 150A. Based on Trench technology, IPB085N06L G-VB provides excellent conduction performance and low power consumption, and is suitable for high-power and high-efficiency electronic systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate voltage (VGS)**: ±20V
- **Throwing voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS=10V
- **Drain current (ID)**: 150A
- **Technology**: Trench technology
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate voltage (VGS)**: ±20V
- **Throwing voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS=10V
- **Drain current (ID)**: 150A
- **Technology**: Trench technology
Domain and module applications：
III. Application fields and module examples
1. **High-efficiency power management**: IPB085N06L G-VB is suitable for various high-efficiency power management systems, including computer power supplies and industrial power supplies. Its low on-resistance (RDS(ON)) and high current carrying capacity can effectively reduce power loss and improve the overall efficiency of the power supply.
2. **Power tools**: In power tool and motor drive applications, this MOSFET can withstand high currents and provide low power operation. Its high current handling capability and low on-resistance ensure efficient and stable operation of the motor drive system, enhancing the performance and reliability of the tool.
3. **Automotive electronic systems**: The applications of IPB085N06L G-VB in automotive electronic systems include battery management and power distribution. Its high current carrying capacity and low power consumption characteristics help improve the overall efficiency and reliability of electric vehicle and hybrid vehicle systems.
4. **Switching power supply module**: In switching power supply modules, such as adapters and inverters, the excellent conduction performance and low RDS(ON) characteristics of this MOSFET enable it to improve the efficiency of power conversion and is suitable for high-power power supply applications.
IPB085N06L G-VB, with its high current handling capability and low power consumption performance, provides an excellent solution for high-efficiency power supply and drive systems, and is widely used in various electronic systems requiring high efficiency and high stability.
1. **High-efficiency power management**: IPB085N06L G-VB is suitable for various high-efficiency power management systems, including computer power supplies and industrial power supplies. Its low on-resistance (RDS(ON)) and high current carrying capacity can effectively reduce power loss and improve the overall efficiency of the power supply.
2. **Power tools**: In power tool and motor drive applications, this MOSFET can withstand high currents and provide low power operation. Its high current handling capability and low on-resistance ensure efficient and stable operation of the motor drive system, enhancing the performance and reliability of the tool.
3. **Automotive electronic systems**: The applications of IPB085N06L G-VB in automotive electronic systems include battery management and power distribution. Its high current carrying capacity and low power consumption characteristics help improve the overall efficiency and reliability of electric vehicle and hybrid vehicle systems.
4. **Switching power supply module**: In switching power supply modules, such as adapters and inverters, the excellent conduction performance and low RDS(ON) characteristics of this MOSFET enable it to improve the efficiency of power conversion and is suitable for high-power power supply applications.
IPB085N06L G-VB, with its high current handling capability and low power consumption performance, provides an excellent solution for high-efficiency power supply and drive systems, and is widely used in various electronic systems requiring high efficiency and high stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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