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IPB083N10N3 G-VB Product details
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Product Introduction:
IPB083N10N3 G-VB is a high-performance single N-channel MOSFET in TO263 package, designed for medium-to-high voltage and high current applications. Its drain-source voltage (VDS) is as high as 100V, suitable for handling higher voltage loads. The on-resistance (RDS(ON)) of this MOSFET is low, especially at VGS of 10V, which is only 10mΩ, ensuring efficient energy transfer and low power consumption. Utilizing Trench technology, IPB083N10N3 G-VB provides excellent switching performance and reliability, and is very suitable for use in high-power electronic applications.
IPB083N10N3 G-VB is a high-performance single N-channel MOSFET in TO263 package, designed for medium-to-high voltage and high current applications. Its drain-source voltage (VDS) is as high as 100V, suitable for handling higher voltage loads. The on-resistance (RDS(ON)) of this MOSFET is low, especially at VGS of 10V, which is only 10mΩ, ensuring efficient energy transfer and low power consumption. Utilizing Trench technology, IPB083N10N3 G-VB provides excellent switching performance and reliability, and is very suitable for use in high-power electronic applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description:
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 23mΩ@VGS=4.5V
- 10mΩ@VGS=10V
- **Drain current (ID)**: 100A
- **Technology**: Trench technology, providing low on-resistance and high switching speed
- **Thermal resistance (Rth(ja))**: About 62 K/W (typical value)
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 23mΩ@VGS=4.5V
- 10mΩ@VGS=10V
- **Drain current (ID)**: 100A
- **Technology**: Trench technology, providing low on-resistance and high switching speed
- **Thermal resistance (Rth(ja))**: About 62 K/W (typical value)
Domain and module applications：
Applicable fields and module applications:
1. **Electric vehicle (EV) drive system**: IPB083N10N3 G-VB can provide reliable current control and efficient energy conversion in the motor drive system of electric vehicles. Its high current capability and low on-resistance are suitable for motor drive and battery management systems, ensuring stable operation of electric vehicles under high load conditions.
2. **High-efficiency switching power supply (SMPS)**: This MOSFET is very suitable for switching power supply (SMPS), which can handle high current loads and maintain high efficiency. Its low on-resistance helps reduce energy loss and improve the overall efficiency of the power module, and is suitable for power converters and power conditioners.
3. **Industrial automation and motor control**: In industrial automation systems, such as inverters and servo drives, the high current capability and low on-resistance of IPB083N10N3 G-VB provide stable current control. It is suitable for high-power motor control systems to improve system efficiency and reliability.
4. **Server Power Management**: The low on-resistance and high current handling capability of this MOSFET make it an ideal choice in power modules for data centers and servers. It can effectively manage high power loads, improve the performance of power modules, and reduce the energy consumption of the system.
5. **DC-DC Converter**: The characteristics of IPB083N10N3 G-VB make it suitable for a variety of DC-DC converter applications. Its low on-resistance and high switching speed can improve energy conversion efficiency and reduce heat generation, making it suitable for use in power management modules and voltage regulators.
1. **Electric vehicle (EV) drive system**: IPB083N10N3 G-VB can provide reliable current control and efficient energy conversion in the motor drive system of electric vehicles. Its high current capability and low on-resistance are suitable for motor drive and battery management systems, ensuring stable operation of electric vehicles under high load conditions.
2. **High-efficiency switching power supply (SMPS)**: This MOSFET is very suitable for switching power supply (SMPS), which can handle high current loads and maintain high efficiency. Its low on-resistance helps reduce energy loss and improve the overall efficiency of the power module, and is suitable for power converters and power conditioners.
3. **Industrial automation and motor control**: In industrial automation systems, such as inverters and servo drives, the high current capability and low on-resistance of IPB083N10N3 G-VB provide stable current control. It is suitable for high-power motor control systems to improve system efficiency and reliability.
4. **Server Power Management**: The low on-resistance and high current handling capability of this MOSFET make it an ideal choice in power modules for data centers and servers. It can effectively manage high power loads, improve the performance of power modules, and reduce the energy consumption of the system.
5. **DC-DC Converter**: The characteristics of IPB083N10N3 G-VB make it suitable for a variety of DC-DC converter applications. Its low on-resistance and high switching speed can improve energy conversion efficiency and reduce heat generation, making it suitable for use in power management modules and voltage regulators.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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