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IPB081N06L3 G-VB Product details
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1. Product Introduction
**IPB081N06L3 G-VB** is a high-performance single N-channel MOSFET with a package type of TO263. This MOSFET adopts advanced Trench trench technology and is designed to handle high current and high power density applications. It is able to operate stably at a drain-source voltage (VDS) of 60V and a maximum continuous drain current (ID) of 150A. The MOSFET has an on-resistance (RDS(ON)) as low as 4mΩ at a gate-source voltage (VGS) of 10V, providing superior current transfer efficiency and low power consumption. This makes the IPB081N06L3 G-VB MOSFET very suitable for a variety of application scenarios requiring high performance and high reliability.
**IPB081N06L3 G-VB** is a high-performance single N-channel MOSFET with a package type of TO263. This MOSFET adopts advanced Trench trench technology and is designed to handle high current and high power density applications. It is able to operate stably at a drain-source voltage (VDS) of 60V and a maximum continuous drain current (ID) of 150A. The MOSFET has an on-resistance (RDS(ON)) as low as 4mΩ at a gate-source voltage (VGS) of 10V, providing superior current transfer efficiency and low power consumption. This makes the IPB081N06L3 G-VB MOSFET very suitable for a variety of application scenarios requiring high performance and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description
- **Model**: IPB081N06L3 G-VB
- **Package**: TO263
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-up voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS=10V
- **Continuous drain current (ID)**: 150A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 175°C
- **Switching time**: Fast switching characteristics, suitable for high frequency applications
- **Gate charge (Qg)**: High efficiency drive, suitable for high switching frequency applications
- **Model**: IPB081N06L3 G-VB
- **Package**: TO263
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-up voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS=10V
- **Continuous drain current (ID)**: 150A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 175°C
- **Switching time**: Fast switching characteristics, suitable for high frequency applications
- **Gate charge (Qg)**: High efficiency drive, suitable for high switching frequency applications
Domain and module applications：
3. Applicable fields and modules
**IPB081N06L3 G-VB** MOSFET's high current handling capability and low on-resistance enable it to excel in multiple fields. Here are some typical application scenarios:
- **Power management**: Applicable to DC-DC converters and power supply voltage regulator modules, it can reduce power loss and improve conversion efficiency in high power density applications. It is very suitable for industrial power supplies, server power supplies, and high-efficiency power adapters.
- **Electric Vehicles (EV)**: In battery management systems and motor controllers, this MOSFET can provide efficient current control, reduce energy loss, and improve the overall efficiency and endurance of batteries and motors.
- **Motor drive**: In industrial automation and robotic systems, IPB081N06L3 G-VB can be used to drive high-current motors, provide stable power output and low conduction loss, and ensure high efficiency and stability of the system.
- **Uninterruptible Power Supply (UPS)**: In uninterruptible power supplies and inverters, this MOSFET can support high-efficiency operation in high-current environments, ensuring the stability of power output and system efficiency.
- **Consumer Electronics Devices**: For example, high-efficiency chargers and small power supply devices, the low on-resistance and fast switching characteristics of this MOSFET help improve energy transfer efficiency, reduce power loss, and extend battery life.
In general, the **IPB081N06L3 G-VB** MOSFET is an ideal choice for these application scenarios with its high current handling capability, low on-resistance and fast switching characteristics, which can significantly improve the overall performance and reliability of the system.
**IPB081N06L3 G-VB** MOSFET's high current handling capability and low on-resistance enable it to excel in multiple fields. Here are some typical application scenarios:
- **Power management**: Applicable to DC-DC converters and power supply voltage regulator modules, it can reduce power loss and improve conversion efficiency in high power density applications. It is very suitable for industrial power supplies, server power supplies, and high-efficiency power adapters.
- **Electric Vehicles (EV)**: In battery management systems and motor controllers, this MOSFET can provide efficient current control, reduce energy loss, and improve the overall efficiency and endurance of batteries and motors.
- **Motor drive**: In industrial automation and robotic systems, IPB081N06L3 G-VB can be used to drive high-current motors, provide stable power output and low conduction loss, and ensure high efficiency and stability of the system.
- **Uninterruptible Power Supply (UPS)**: In uninterruptible power supplies and inverters, this MOSFET can support high-efficiency operation in high-current environments, ensuring the stability of power output and system efficiency.
- **Consumer Electronics Devices**: For example, high-efficiency chargers and small power supply devices, the low on-resistance and fast switching characteristics of this MOSFET help improve energy transfer efficiency, reduce power loss, and extend battery life.
In general, the **IPB081N06L3 G-VB** MOSFET is an ideal choice for these application scenarios with its high current handling capability, low on-resistance and fast switching characteristics, which can significantly improve the overall performance and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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