中文
English
IPB080N03L G-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction of IPB080N03L G-VB MOSFET
IPB080N03L G-VB is a high-performance N-channel power MOSFET in TO-263 package, designed for high current and high efficiency switching applications. With a maximum drain-source voltage of 30V and supporting a continuous drain current of up to 98A, this MOSFET is suitable for applications that require high current handling and low power consumption. It uses advanced trench technology (Trench) to provide extremely low on-resistance, significantly improving switching efficiency and power conversion performance. The low threshold voltage (Vth) enables efficient conduction at a lower gate voltage, further improving its performance in high-efficiency systems.
IPB080N03L G-VB is a high-performance N-channel power MOSFET in TO-263 package, designed for high current and high efficiency switching applications. With a maximum drain-source voltage of 30V and supporting a continuous drain current of up to 98A, this MOSFET is suitable for applications that require high current handling and low power consumption. It uses advanced trench technology (Trench) to provide extremely low on-resistance, significantly improving switching efficiency and power conversion performance. The low threshold voltage (Vth) enables efficient conduction at a lower gate voltage, further improving its performance in high-efficiency systems.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description of IPB080N03L G-VB MOSFET
- **Package type**: TO-263
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS=4.5V
- 2.4mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 98A
- **Technology**: Trench technology
- **Package type**: TO-263
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS=4.5V
- 2.4mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 98A
- **Technology**: Trench technology
Domain and module applications：
III. Application fields and module examples of IPB080N03L G-VB
1. **Electric vehicle (EV) control system**: In the battery management system and motor drive module of electric vehicles, IPB080N03L G-VB is particularly important due to its low on-resistance and high current carrying capacity. This MOSFET can optimize battery efficiency and improve the overall performance of the motor control system, making it an ideal choice for high-efficiency power management in electric vehicles.
2. **DC-DC converter**: IPB080N03L G-VB is very suitable for use in the synchronous rectification stage of DC-DC converters, and its low on-resistance helps reduce power loss and improve power conversion efficiency. This MOSFET is particularly suitable for server power supplies, communication equipment power supplies, and other power management modules that require high efficiency.
3. **Industrial power supply system**: In industrial power supply and uninterruptible power supply (UPS) systems, IPB080N03L G-VB is used in high-current switching applications to provide reliable current management and efficient power conversion. Its high current carrying capacity and low on-resistance enable it to excel in these demanding applications.
4. **Consumer Electronics**: In the power management modules of consumer electronics such as large household appliances and gaming devices, the IPB080N03L G-VB can effectively improve power conversion efficiency and reduce power loss. Its excellent switching performance helps optimize the overall energy efficiency of the equipment and ensure efficient and stable operation.
In short, with its low on-resistance and high current handling capability, the IPB080N03L G-VB MOSFET is widely used in many fields such as electric vehicles, power converters, industrial power supplies and consumer electronics, providing strong support for efficient power management.
1. **Electric vehicle (EV) control system**: In the battery management system and motor drive module of electric vehicles, IPB080N03L G-VB is particularly important due to its low on-resistance and high current carrying capacity. This MOSFET can optimize battery efficiency and improve the overall performance of the motor control system, making it an ideal choice for high-efficiency power management in electric vehicles.
2. **DC-DC converter**: IPB080N03L G-VB is very suitable for use in the synchronous rectification stage of DC-DC converters, and its low on-resistance helps reduce power loss and improve power conversion efficiency. This MOSFET is particularly suitable for server power supplies, communication equipment power supplies, and other power management modules that require high efficiency.
3. **Industrial power supply system**: In industrial power supply and uninterruptible power supply (UPS) systems, IPB080N03L G-VB is used in high-current switching applications to provide reliable current management and efficient power conversion. Its high current carrying capacity and low on-resistance enable it to excel in these demanding applications.
4. **Consumer Electronics**: In the power management modules of consumer electronics such as large household appliances and gaming devices, the IPB080N03L G-VB can effectively improve power conversion efficiency and reduce power loss. Its excellent switching performance helps optimize the overall energy efficiency of the equipment and ensure efficient and stable operation.
In short, with its low on-resistance and high current handling capability, the IPB080N03L G-VB MOSFET is widely used in many fields such as electric vehicles, power converters, industrial power supplies and consumer electronics, providing strong support for efficient power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
