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IPB075N04L G-VB Product details
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IPB075N04L G-VB Product Introduction
IPB075N04L G-VB is a high-performance single-channel N-type power MOSFET in TO263 package, designed for high current and low power applications. This MOSFET has a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) of ±20V, suitable for use under a variety of operating conditions. Its threshold voltage is 2.5V, and the application of Trench technology ensures extremely low on-resistance under low gate drive, thereby achieving high-efficiency switching performance. The maximum drain current of IPB075N04L G-VB reaches 100A, enabling it to operate stably under high load conditions, suitable for a variety of application scenarios with high power and high efficiency requirements.
IPB075N04L G-VB is a high-performance single-channel N-type power MOSFET in TO263 package, designed for high current and low power applications. This MOSFET has a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) of ±20V, suitable for use under a variety of operating conditions. Its threshold voltage is 2.5V, and the application of Trench technology ensures extremely low on-resistance under low gate drive, thereby achieving high-efficiency switching performance. The maximum drain current of IPB075N04L G-VB reaches 100A, enabling it to operate stably under high load conditions, suitable for a variety of application scenarios with high power and high efficiency requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
IPB075N04L G-VB Parameter Description
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ@VGS=4.5V
- 5mΩ@VGS=10V
- **Drain current (ID)**: 100A
- **Technology**: Trench technology
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ@VGS=4.5V
- 5mΩ@VGS=10V
- **Drain current (ID)**: 100A
- **Technology**: Trench technology
Domain and module applications：
Application fields and modules of IPB075N04L G-VB
The high current handling capability and low on-resistance of IPB075N04L G-VB make it widely used in many fields:
1. **Automotive electronic system**: In automotive power management and high-power electrical systems, IPB075N04L G-VB can be applied to electric power steering systems, electric brake systems and automotive lighting control modules, providing reliable power transmission and efficient switching functions to ensure the stability and performance of automotive systems.
2. **DC-DC converter**: The low on-resistance and high current carrying capacity of this MOSFET make it very suitable for various DC-DC converters (such as buck and boost converters) to optimize power conversion efficiency, reduce energy loss, and improve the overall performance of the system.
3. **Power Tools**: In power tools and other high-power motor drive applications, the high current capability and low power consumption provided by the IPB075N04L G-VB can support stable operation of tools under high load conditions, reduce overheating problems, and improve equipment reliability and service life.
4. **Industrial Motor Control**: In industrial automation and control systems, this MOSFET can be used in motor drive modules and other high-power control applications to provide efficient power control and precise switching functions to meet the high current and high load requirements of industrial equipment.
5. **Data Center Power Management**: In data centers and computer power systems, the high efficiency and low power consumption of the IPB075N04L G-VB can optimize power management, improve the overall efficiency of the power system, reduce heat generation, and thus enhance system performance and reliability.
The high current handling capability and low on-resistance of IPB075N04L G-VB make it widely used in many fields:
1. **Automotive electronic system**: In automotive power management and high-power electrical systems, IPB075N04L G-VB can be applied to electric power steering systems, electric brake systems and automotive lighting control modules, providing reliable power transmission and efficient switching functions to ensure the stability and performance of automotive systems.
2. **DC-DC converter**: The low on-resistance and high current carrying capacity of this MOSFET make it very suitable for various DC-DC converters (such as buck and boost converters) to optimize power conversion efficiency, reduce energy loss, and improve the overall performance of the system.
3. **Power Tools**: In power tools and other high-power motor drive applications, the high current capability and low power consumption provided by the IPB075N04L G-VB can support stable operation of tools under high load conditions, reduce overheating problems, and improve equipment reliability and service life.
4. **Industrial Motor Control**: In industrial automation and control systems, this MOSFET can be used in motor drive modules and other high-power control applications to provide efficient power control and precise switching functions to meet the high current and high load requirements of industrial equipment.
5. **Data Center Power Management**: In data centers and computer power systems, the high efficiency and low power consumption of the IPB075N04L G-VB can optimize power management, improve the overall efficiency of the power system, reduce heat generation, and thus enhance system performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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