Featured Model

IPB072N15N3 G-VB Product details

Product introduction:

1. IPB072N15N3 G-VB Product Introduction:
IPB072N15N3 G-VB is a high-performance single-channel N-channel MOSFET produced by Infineon, using TO263 package. This MOSFET is designed for applications that require high voltage and high current handling, with a drain-source voltage (VDS) of up to 150V and a maximum drain current (ID) of 128A. Its on-resistance (RDS(ON)) is 7.5mΩ at VGS=10V, providing excellent conduction performance and low power consumption. IPB072N15N3 G-VB uses advanced Trench technology, with high switching speed and high efficiency, and is suitable for use in a variety of high-power power management and conversion applications.

File download

Download PDF document
Download now

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 150V 3V 128A 7.5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 150V 3V 128A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 150V 3V 128A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
2. IPB072N15N3 G-VB Detailed parameter description:
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 150V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 7.5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 128A
- **Technology type**: Trench

Domain and module applications:

III. Application fields and modules:
1. **High voltage DC-DC converter**:
IPB072N15N3 G-VB performs well in high voltage DC-DC converters. Its high drain-source voltage (VDS) and low on-resistance enable it to effectively handle power conversion in high voltage environments, and is suitable for power conversion applications that require high efficiency and high reliability, such as communication equipment, power systems, and industrial automation equipment.

2. **Electric vehicle (EV) drive system**:
In the motor drive system of electric vehicles, this MOSFET is able to handle high voltage and high current requirements. Its high current capability and low on-resistance ensure the efficiency and stability of electric vehicles in high power operation, and is particularly suitable for use in motor control and battery management systems.

3. **Power management module**:
IPB072N15N3 G-VB is suitable for a variety of power management modules, including high power switching and power regulation applications. Its high voltage withstand capability and low power consumption enable it to provide efficient power conversion and control in power modules, reduce system energy consumption and improve overall performance.

4. **Industrial Power and Switch**:
In industrial power and switch applications, the IPB072N15N3 G-VB is able to handle high voltage and high current loads. Its high voltage withstand characteristics enable it to adapt to the harsh conditions in industrial environments and be used in motor drive, power conversion and protection circuits to ensure system stability and efficiency.

Through these application examples, the IPB072N15N3 G-VB demonstrates its wide applicability in high voltage, high current and high efficiency applications, providing a reliable solution for high power power management and conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

WeChat

Topping

Sample Req
Online
Telephone
WeChat