IPB072N15N3 G-VB Product details
Product introduction:
IPB072N15N3 G-VB is a high-performance single-channel N-channel MOSFET produced by Infineon, using TO263 package. This MOSFET is designed for applications that require high voltage and high current handling, with a drain-source voltage (VDS) of up to 150V and a maximum drain current (ID) of 128A. Its on-resistance (RDS(ON)) is 7.5mΩ at VGS=10V, providing excellent conduction performance and low power consumption. IPB072N15N3 G-VB uses advanced Trench technology, with high switching speed and high efficiency, and is suitable for use in a variety of high-power power management and conversion applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 150V | 3V | 128A | 7.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 150V | 3V | 128A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 150V | 3V | 128A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 150V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 7.5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 128A
- **Technology type**: Trench
Domain and module applications:
1. **High voltage DC-DC converter**:
IPB072N15N3 G-VB performs well in high voltage DC-DC converters. Its high drain-source voltage (VDS) and low on-resistance enable it to effectively handle power conversion in high voltage environments, and is suitable for power conversion applications that require high efficiency and high reliability, such as communication equipment, power systems, and industrial automation equipment.
2. **Electric vehicle (EV) drive system**:
In the motor drive system of electric vehicles, this MOSFET is able to handle high voltage and high current requirements. Its high current capability and low on-resistance ensure the efficiency and stability of electric vehicles in high power operation, and is particularly suitable for use in motor control and battery management systems.
3. **Power management module**:
IPB072N15N3 G-VB is suitable for a variety of power management modules, including high power switching and power regulation applications. Its high voltage withstand capability and low power consumption enable it to provide efficient power conversion and control in power modules, reduce system energy consumption and improve overall performance.
4. **Industrial Power and Switch**:
In industrial power and switch applications, the IPB072N15N3 G-VB is able to handle high voltage and high current loads. Its high voltage withstand characteristics enable it to adapt to the harsh conditions in industrial environments and be used in motor drive, power conversion and protection circuits to ensure system stability and efficiency.
Through these application examples, the IPB072N15N3 G-VB demonstrates its wide applicability in high voltage, high current and high efficiency applications, providing a reliable solution for high power power management and conversion.
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