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IPB070N06N G-VB Product details
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Product Introduction
**IPB070N06N G-VB** is a high-performance N-Channel MOSFET in TO263 package, designed based on advanced Trench technology. This MOSFET has extremely low on-resistance and high current handling capability, making it ideal for applications requiring high efficiency and high reliability. Its maximum drain-source voltage is 60V, supporting up to 150A of continuous current, ensuring stable and efficient performance in high-power switching applications.
**IPB070N06N G-VB** is a high-performance N-Channel MOSFET in TO263 package, designed based on advanced Trench technology. This MOSFET has extremely low on-resistance and high current handling capability, making it ideal for applications requiring high efficiency and high reliability. Its maximum drain-source voltage is 60V, supporting up to 150A of continuous current, ensuring stable and efficient performance in high-power switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ (at VGS = 10V)
- **Maximum continuous current (ID)**: 150A
- **Technology**: Trench
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ (at VGS = 10V)
- **Maximum continuous current (ID)**: 150A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules
1. **Electric vehicles**:
In the field of electric vehicles, the high current carrying capacity and low on-resistance of **IPB070N06N G-VB** make it very suitable for use in battery management systems and motor drive modules. It can support high-power switching requirements and reduce power loss and heat generation while maintaining high efficiency, thereby improving the reliability and durability of the entire system.
2. **Power converters**:
In power converters and power management modules, the low RDS(ON) characteristics of this MOSFET can effectively reduce power consumption and improve efficiency. For example, **IPB070N06N G-VB** can be used in DC-DC converters, high-efficiency power adapters, and other power management devices that require high efficiency, thereby achieving higher energy efficiency conversion.
3. **Industrial automation**:
In the field of industrial control and automation, the high current handling capability of this MOSFET makes it very suitable for driving industrial motors and other high-power devices. Its stable performance can ensure long-lasting and efficient power transmission and control in harsh industrial environments, helping to improve the efficiency and safety of production equipment.
4. **High Power Switch Application**:
**IPB070N06N G-VB** is also widely used in various high power switch applications, such as power amplifiers and load control systems. It can handle high current loads, and its low power consumption makes it very suitable for use in frequent switching applications.
1. **Electric vehicles**:
In the field of electric vehicles, the high current carrying capacity and low on-resistance of **IPB070N06N G-VB** make it very suitable for use in battery management systems and motor drive modules. It can support high-power switching requirements and reduce power loss and heat generation while maintaining high efficiency, thereby improving the reliability and durability of the entire system.
2. **Power converters**:
In power converters and power management modules, the low RDS(ON) characteristics of this MOSFET can effectively reduce power consumption and improve efficiency. For example, **IPB070N06N G-VB** can be used in DC-DC converters, high-efficiency power adapters, and other power management devices that require high efficiency, thereby achieving higher energy efficiency conversion.
3. **Industrial automation**:
In the field of industrial control and automation, the high current handling capability of this MOSFET makes it very suitable for driving industrial motors and other high-power devices. Its stable performance can ensure long-lasting and efficient power transmission and control in harsh industrial environments, helping to improve the efficiency and safety of production equipment.
4. **High Power Switch Application**:
**IPB070N06N G-VB** is also widely used in various high power switch applications, such as power amplifiers and load control systems. It can handle high current loads, and its low power consumption makes it very suitable for use in frequent switching applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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