中文
English
IPB06N03LB G-VB Product details
Back to previous pageProduct introduction：
IPB06N03LB G-VB Product Introduction
IPB06N03LB G-VB is a high-performance N-channel MOSFET in TO263 package with excellent on-resistance performance. The device can withstand 30V drain-source voltage, has a low turn-on threshold voltage and low on-resistance. With Trench technology, it provides efficient switching performance in high current applications and is suitable for areas requiring precise power management.
IPB06N03LB G-VB is a high-performance N-channel MOSFET in TO263 package with excellent on-resistance performance. The device can withstand 30V drain-source voltage, has a low turn-on threshold voltage and low on-resistance. With Trench technology, it provides efficient switching performance in high current applications and is suitable for areas requiring precise power management.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
IPB06N03LB G-VB Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate drive voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 8mΩ @ VGS=4.5V, 6mΩ @ VGS=10V
- **Maximum drain current (ID)**: 70A
- **Technology**: Trench technology
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate drive voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 8mΩ @ VGS=4.5V, 6mΩ @ VGS=10V
- **Maximum drain current (ID)**: 70A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **Power conversion modules**: IPB06N03LB G-VB can be used in low-voltage DC-DC converters and point-of-load (POL) converters. These applications have strict requirements on power consumption and switching efficiency. The low on-resistance of IPB06N03LB G-VB makes it an ideal choice for optimizing power transmission and reducing losses.
2. **Consumer electronics**: In high-end consumer electronic devices such as smartphones, laptops, and game consoles, this MOSFET can be used in voltage regulation modules and power management systems. Its low turn-on voltage and low on-resistance make it suitable for efficient power management in small, portable devices, extending battery life and improving overall performance.
3. **Power tools and equipment**: IPB06N03LB G-VB can be used in power switch modules in power tools. Its high current handling capability and excellent switching speed can increase the power output of power tools, improve work efficiency and reduce energy loss.
4. **Automotive electronics**: In 12V automotive electronic systems, such as on-board chargers and power control systems, IPB06N03LB G-VB provides reliable power management and conversion functions. Its high current capability and low on-resistance ensure the efficient operation and reliability of the automotive power system.
IPB06N03LB G-VB is suitable for a variety of application scenarios that require high current and high efficiency switching, and is widely used in power management, consumer electronics and industrial automation.
1. **Power conversion modules**: IPB06N03LB G-VB can be used in low-voltage DC-DC converters and point-of-load (POL) converters. These applications have strict requirements on power consumption and switching efficiency. The low on-resistance of IPB06N03LB G-VB makes it an ideal choice for optimizing power transmission and reducing losses.
2. **Consumer electronics**: In high-end consumer electronic devices such as smartphones, laptops, and game consoles, this MOSFET can be used in voltage regulation modules and power management systems. Its low turn-on voltage and low on-resistance make it suitable for efficient power management in small, portable devices, extending battery life and improving overall performance.
3. **Power tools and equipment**: IPB06N03LB G-VB can be used in power switch modules in power tools. Its high current handling capability and excellent switching speed can increase the power output of power tools, improve work efficiency and reduce energy loss.
4. **Automotive electronics**: In 12V automotive electronic systems, such as on-board chargers and power control systems, IPB06N03LB G-VB provides reliable power management and conversion functions. Its high current capability and low on-resistance ensure the efficient operation and reliability of the automotive power system.
IPB06N03LB G-VB is suitable for a variety of application scenarios that require high current and high efficiency switching, and is widely used in power management, consumer electronics and industrial automation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
