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IPB06N03LA G-VB Product details
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Product Introduction
IPB06N03LA G-VB is a single N-channel MOSFET in a TO263 package with a maximum drain-source voltage (VDS) of 30V and a maximum on-current (ID) of 98A. The device has an on-resistance of 2.7mΩ (at VGS = 4.5V) and 2.4mΩ (at VGS = 10V), demonstrating its low loss and high efficiency. Using trench technology, this MOSFET has high switching speed and low on-resistance, suitable for use in applications requiring efficient current control, especially in power conversion and management systems.
IPB06N03LA G-VB is a single N-channel MOSFET in a TO263 package with a maximum drain-source voltage (VDS) of 30V and a maximum on-current (ID) of 98A. The device has an on-resistance of 2.7mΩ (at VGS = 4.5V) and 2.4mΩ (at VGS = 10V), demonstrating its low loss and high efficiency. Using trench technology, this MOSFET has high switching speed and low on-resistance, suitable for use in applications requiring efficient current control, especially in power conversion and management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- @ VGS = 4.5V: 2.7mΩ
- @ VGS = 10V: 2.4mΩ
- **Maximum on-current (ID)**: 98A
- **Technology type**: Trench
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- @ VGS = 4.5V: 2.7mΩ
- @ VGS = 10V: 2.4mΩ
- **Maximum on-current (ID)**: 98A
- **Technology type**: Trench
Domain and module applications：
Applications and module examples: IPB06N03LA G-VB MOSFET is very suitable for use in various applications requiring efficient current control due to its low on-resistance and high on-current. First, the device is widely used in efficient power conversion devices such as DC-DC converters to improve overall system efficiency by reducing power losses. Secondly, in switching power supplies (SMPS), this MOSFET can operate stably under high current demands and provide reliable power management. Due to its efficient switching performance, it is also widely used in the power system and battery management system (BMS) of electric vehicles to ensure stable operation in harsh working environments and improve the energy efficiency and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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