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IPB06CNE8N G-VB Product details
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1. Product Introduction
IPB06CNE8N G-VB is a high-performance single N-channel MOSFET in TO263 package. With a drain-source voltage (VDS) of 80V and a gate voltage (VGS) of ±20V, the device is suitable for high current and high voltage applications. Its turn-on voltage (Vth) is 3V, and its on-resistance (RDS(ON)) is 10mΩ@VGS=4.5V and 6mΩ@VGS=10V, capable of handling currents up to 120A. Based on trench technology, IPB06CNE8N G-VB provides excellent conduction characteristics and low losses, and is particularly suitable for high-performance power management and drive applications.
IPB06CNE8N G-VB is a high-performance single N-channel MOSFET in TO263 package. With a drain-source voltage (VDS) of 80V and a gate voltage (VGS) of ±20V, the device is suitable for high current and high voltage applications. Its turn-on voltage (Vth) is 3V, and its on-resistance (RDS(ON)) is 10mΩ@VGS=4.5V and 6mΩ@VGS=10V, capable of handling currents up to 120A. Based on trench technology, IPB06CNE8N G-VB provides excellent conduction characteristics and low losses, and is particularly suitable for high-performance power management and drive applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 80V
- **Gate voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 6mΩ @ VGS=10V
- **Drain current (ID)**: 120A
- **Technology**: Trench technology
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 80V
- **Gate voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 6mΩ @ VGS=10V
- **Drain current (ID)**: 120A
- **Technology**: Trench technology
Domain and module applications：
III. Application fields and module examples
1. **Electric vehicle (EV) power control system**: IPB06CNE8N G-VB can be used for the power control and drive system of electric vehicles. Its high current handling capability and low on-resistance can optimize power transmission efficiency and improve the energy efficiency and performance of the entire vehicle system.
2. **Switch mode power supply (SMPS)**: In a switch mode power supply, this MOSFET can effectively reduce energy loss during power conversion with its low conduction loss, improve system efficiency and stability, and is suitable for high-power power conversion equipment.
3. **Photovoltaic power inverter**: In the inverter module of the photovoltaic power generation system, the high voltage and current handling capability of IPB06CNE8N G-VB makes it an important component for converting DC to AC, ensuring efficient energy transmission.
4. **Motor drive and industrial automation equipment**: In motor control and industrial automation equipment, MOSFET can be used to drive motors. Especially in high current demand environments, the low RDS(ON) performance of this MOSFET can improve motor efficiency and reduce heat.
With its excellent electrical characteristics, this product is widely used in high current, high voltage power management and drive systems, ensuring excellent performance and efficient power conversion in various complex application scenarios.
1. **Electric vehicle (EV) power control system**: IPB06CNE8N G-VB can be used for the power control and drive system of electric vehicles. Its high current handling capability and low on-resistance can optimize power transmission efficiency and improve the energy efficiency and performance of the entire vehicle system.
2. **Switch mode power supply (SMPS)**: In a switch mode power supply, this MOSFET can effectively reduce energy loss during power conversion with its low conduction loss, improve system efficiency and stability, and is suitable for high-power power conversion equipment.
3. **Photovoltaic power inverter**: In the inverter module of the photovoltaic power generation system, the high voltage and current handling capability of IPB06CNE8N G-VB makes it an important component for converting DC to AC, ensuring efficient energy transmission.
4. **Motor drive and industrial automation equipment**: In motor control and industrial automation equipment, MOSFET can be used to drive motors. Especially in high current demand environments, the low RDS(ON) performance of this MOSFET can improve motor efficiency and reduce heat.
With its excellent electrical characteristics, this product is widely used in high current, high voltage power management and drive systems, ensuring excellent performance and efficient power conversion in various complex application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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