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IPB067N08N3 G-VB Product details
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Product Introduction:
IPB067N08N3 G-VB is a single N-channel MOSFET in TO263 package, designed for high current and medium-high voltage applications. Its drain-source voltage (VDS) is 80V, with good voltage tolerance, and extremely low on-resistance (RDS(ON)), ensuring low power consumption under high current conditions. The device uses advanced Trench technology to provide excellent switching performance and efficient energy conversion, which is very suitable for high-power applications in power management and industrial control.
IPB067N08N3 G-VB is a single N-channel MOSFET in TO263 package, designed for high current and medium-high voltage applications. Its drain-source voltage (VDS) is 80V, with good voltage tolerance, and extremely low on-resistance (RDS(ON)), ensuring low power consumption under high current conditions. The device uses advanced Trench technology to provide excellent switching performance and efficient energy conversion, which is very suitable for high-power applications in power management and industrial control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description:
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ@VGS=4.5V
- 6mΩ@VGS=10V
- **Drain current (ID)**: 120A
- **Technology**: Trench technology, providing low on-resistance and high switching speed
- **Thermal resistance (Rth(ja))**: About 62 K/W (typical value)
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ@VGS=4.5V
- 6mΩ@VGS=10V
- **Drain current (ID)**: 120A
- **Technology**: Trench technology, providing low on-resistance and high switching speed
- **Thermal resistance (Rth(ja))**: About 62 K/W (typical value)
Domain and module applications：
Applicable fields and module applications:
1. **Automotive electronic systems**: The IPB067N08N3 G-VB is suitable for power distribution modules and motor control units in automotive electronic systems. Its high current and high voltage capabilities can meet the high requirements of vehicles for power and energy efficiency, especially in power conversion and battery management systems of electric vehicles (EVs) and hybrid vehicles.
2. **Switching power supplies and DC-DC converters**: The low on-resistance and high efficiency of this MOSFET make it very suitable for use in switching power supplies (SMPS) and DC-DC converters. These systems require efficient energy conversion and fast switching speeds, and the IPB067N08N3 G-VB provides ideal performance for power modules and voltage regulation modules.
3. **Industrial motor drives**: In industrial automation equipment, the device can support high current loads and is very suitable for use in industrial motor drives and servo control systems. Its low on-resistance ensures that energy losses are minimized, improves system efficiency, and provides stable current control.
4. **Data Center and Server Power Management**: The IPB067N08N3 G-VB can be used in high-power server power modules, effectively handling high currents and maintaining high efficiency. It is suitable for power conditioning and load distribution modules, helping to reduce energy consumption in data centers.
5. **Photovoltaic Inverter and Energy Storage System**: In photovoltaic inverter and energy storage applications, the IPB067N08N3 G-VB can ensure efficient energy conversion under high current conditions and reduce heat generation. Its high switching speed and low on-resistance make it very suitable for such applications that require efficient power management.
1. **Automotive electronic systems**: The IPB067N08N3 G-VB is suitable for power distribution modules and motor control units in automotive electronic systems. Its high current and high voltage capabilities can meet the high requirements of vehicles for power and energy efficiency, especially in power conversion and battery management systems of electric vehicles (EVs) and hybrid vehicles.
2. **Switching power supplies and DC-DC converters**: The low on-resistance and high efficiency of this MOSFET make it very suitable for use in switching power supplies (SMPS) and DC-DC converters. These systems require efficient energy conversion and fast switching speeds, and the IPB067N08N3 G-VB provides ideal performance for power modules and voltage regulation modules.
3. **Industrial motor drives**: In industrial automation equipment, the device can support high current loads and is very suitable for use in industrial motor drives and servo control systems. Its low on-resistance ensures that energy losses are minimized, improves system efficiency, and provides stable current control.
4. **Data Center and Server Power Management**: The IPB067N08N3 G-VB can be used in high-power server power modules, effectively handling high currents and maintaining high efficiency. It is suitable for power conditioning and load distribution modules, helping to reduce energy consumption in data centers.
5. **Photovoltaic Inverter and Energy Storage System**: In photovoltaic inverter and energy storage applications, the IPB067N08N3 G-VB can ensure efficient energy conversion under high current conditions and reduce heat generation. Its high switching speed and low on-resistance make it very suitable for such applications that require efficient power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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