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IPB065N06L G-VB Product details
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1. Product Introduction
**IPB065N06L G-VB** is a single N-channel MOSFET in TO263 package, designed for high-efficiency current handling applications. The device adopts advanced Trench trench technology, with a drain-source voltage (VDS) of 60V and a continuous drain current (ID) of up to 150A. At a gate-source voltage (VGS) of 10V, the on-resistance (RDS(ON)) is only 4mΩ, ensuring low power consumption and high-efficiency current transmission. It is very suitable for high-current, high-power density applications, and exhibits excellent performance in power management, motor drive and other fields.
**IPB065N06L G-VB** is a single N-channel MOSFET in TO263 package, designed for high-efficiency current handling applications. The device adopts advanced Trench trench technology, with a drain-source voltage (VDS) of 60V and a continuous drain current (ID) of up to 150A. At a gate-source voltage (VGS) of 10V, the on-resistance (RDS(ON)) is only 4mΩ, ensuring low power consumption and high-efficiency current transmission. It is very suitable for high-current, high-power density applications, and exhibits excellent performance in power management, motor drive and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description
- **Model**: IPB065N06L G-VB
- **Package**: TO263
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-up voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS=10V
- **Continuous drain current (ID)**: 150A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 175°C
- **Switching time**: With fast switching characteristics, suitable for high-frequency working environment
- **Gate charge (Qg)**: Suitable for high-efficiency drive applications
- **Model**: IPB065N06L G-VB
- **Package**: TO263
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-up voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS=10V
- **Continuous drain current (ID)**: 150A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 175°C
- **Switching time**: With fast switching characteristics, suitable for high-frequency working environment
- **Gate charge (Qg)**: Suitable for high-efficiency drive applications
Domain and module applications：
3. Application fields and modules
**IPB065N06L G-VB** MOSFET is widely used in many high-efficiency and high-current fields due to its high current handling capability and low on-resistance. Here are some typical application scenarios:
- **Power management**: Applicable to DC-DC converters and voltage-regulated power supply modules. This MOSFET can effectively reduce power loss and improve conversion efficiency in high power density applications, and is very suitable for industrial power supplies and server power supplies.
- **Electric Vehicles (EV)**: In battery management systems and electric vehicle motor controllers, IPB065N06L G-VB can provide efficient current control, reduce energy loss, improve battery charging and discharging efficiency and vehicle endurance.
- **Motor drive**: In industrial automation and robotic systems, this MOSFET is used to drive motors. It has low on-resistance and high current handling capability, can provide stable power output, and ensure efficient operation of the system.
- **Uninterruptible Power Supply (UPS)**: In uninterruptible power supplies and inverters, the IPB065N06L G-VB MOSFET can effectively improve system efficiency and reduce power consumption in high current environments, ensuring stable power output.
- **Consumer Electronics Devices**: For example, efficient chargers and portable power devices, the low on-resistance and fast switching characteristics of this MOSFET help improve energy transfer efficiency, reduce power loss, and extend battery life.
Its low conduction loss and high current handling capability make the **IPB065N06L G-VB** an ideal choice for these high-performance application scenarios.
**IPB065N06L G-VB** MOSFET is widely used in many high-efficiency and high-current fields due to its high current handling capability and low on-resistance. Here are some typical application scenarios:
- **Power management**: Applicable to DC-DC converters and voltage-regulated power supply modules. This MOSFET can effectively reduce power loss and improve conversion efficiency in high power density applications, and is very suitable for industrial power supplies and server power supplies.
- **Electric Vehicles (EV)**: In battery management systems and electric vehicle motor controllers, IPB065N06L G-VB can provide efficient current control, reduce energy loss, improve battery charging and discharging efficiency and vehicle endurance.
- **Motor drive**: In industrial automation and robotic systems, this MOSFET is used to drive motors. It has low on-resistance and high current handling capability, can provide stable power output, and ensure efficient operation of the system.
- **Uninterruptible Power Supply (UPS)**: In uninterruptible power supplies and inverters, the IPB065N06L G-VB MOSFET can effectively improve system efficiency and reduce power consumption in high current environments, ensuring stable power output.
- **Consumer Electronics Devices**: For example, efficient chargers and portable power devices, the low on-resistance and fast switching characteristics of this MOSFET help improve energy transfer efficiency, reduce power loss, and extend battery life.
Its low conduction loss and high current handling capability make the **IPB065N06L G-VB** an ideal choice for these high-performance application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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