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IPB05N03LB G-VB Product details
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IPB05N03LB G-VB Product Introduction
IPB05N03LB G-VB is a high-efficiency single-channel N-type power MOSFET in TO263 package, designed for applications requiring high current handling capability and low on-resistance. The device has a maximum drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, enabling it to adapt to different driving conditions. Its low threshold voltage (Vth) of 1.7V, coupled with the application of Trench technology, ensures extremely low on-resistance under low gate drive, thereby reducing power consumption and improving system efficiency. The maximum drain current of 98A enables it to cope with a variety of high-power demand application scenarios.
IPB05N03LB G-VB is a high-efficiency single-channel N-type power MOSFET in TO263 package, designed for applications requiring high current handling capability and low on-resistance. The device has a maximum drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, enabling it to adapt to different driving conditions. Its low threshold voltage (Vth) of 1.7V, coupled with the application of Trench technology, ensures extremely low on-resistance under low gate drive, thereby reducing power consumption and improving system efficiency. The maximum drain current of 98A enables it to cope with a variety of high-power demand application scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
IPB05N03LB G-VB Parameter Description
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ@VGS=4.5V
- 2.4mΩ@VGS=10V
- **Drain current (ID)**: 98A
- **Technology**: Trench technology
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ@VGS=4.5V
- 2.4mΩ@VGS=10V
- **Drain current (ID)**: 98A
- **Technology**: Trench technology
Domain and module applications：
Application fields and modules of IPB05N03LB G-VB
The IPB05N03LB G-VB has efficient current handling capability and low on-resistance, and is widely used in multiple fields:
1. **Automotive electronics**: In modern automotive systems, the IPB05N03LB G-VB can be applied to electric power steering systems, electric brake systems, headlights, and on-board power control modules, providing efficient power control and switching functions to ensure the stability and reliability of vehicle systems.
2. **DC-DC power conversion**: In power management and converter applications, the low on-resistance and high current capability of this MOSFET can effectively improve the efficiency of buck and boost converters, thereby reducing energy loss. It is suitable for servers, telecommunications equipment, industrial power supplies, etc.
3. **Power tools**: This MOSFET performs well in power tools and other applications that require high power output. Its low power consumption and high efficiency can extend the use time of equipment, reduce overheating problems, and is suitable for high-load environments with long-term operation.
4. **Industrial Motor Drive**: In industrial control systems, IPB05N03LB G-VB can be used for motor drive and automation control modules, providing powerful current handling capabilities to meet complex load requirements in industrial automation, robotics and other fields.
5. **Consumer Electronics and Computer Power Management**: In computers and consumer electronic devices, this MOSFET can be used in power management systems to enhance the overall performance and reliability of the system by improving conversion efficiency, reducing heat dissipation and energy waste.
The IPB05N03LB G-VB has efficient current handling capability and low on-resistance, and is widely used in multiple fields:
1. **Automotive electronics**: In modern automotive systems, the IPB05N03LB G-VB can be applied to electric power steering systems, electric brake systems, headlights, and on-board power control modules, providing efficient power control and switching functions to ensure the stability and reliability of vehicle systems.
2. **DC-DC power conversion**: In power management and converter applications, the low on-resistance and high current capability of this MOSFET can effectively improve the efficiency of buck and boost converters, thereby reducing energy loss. It is suitable for servers, telecommunications equipment, industrial power supplies, etc.
3. **Power tools**: This MOSFET performs well in power tools and other applications that require high power output. Its low power consumption and high efficiency can extend the use time of equipment, reduce overheating problems, and is suitable for high-load environments with long-term operation.
4. **Industrial Motor Drive**: In industrial control systems, IPB05N03LB G-VB can be used for motor drive and automation control modules, providing powerful current handling capabilities to meet complex load requirements in industrial automation, robotics and other fields.
5. **Consumer Electronics and Computer Power Management**: In computers and consumer electronic devices, this MOSFET can be used in power management systems to enhance the overall performance and reliability of the system by improving conversion efficiency, reducing heat dissipation and energy waste.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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