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IPB057N06N-VB Product details
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1. IPB057N06N-VB Product Introduction:
IPB057N06N-VB is a single-channel N-channel MOSFET provided by Infineon, using TO263 package. Its drain-source voltage (VDS) is 60V, and the maximum gate-source voltage (VGS) is ±20V, which is suitable for various medium-voltage high-current application scenarios. This MOSFET adopts advanced Trench technology and has excellent on-resistance performance, which is 12mΩ at VGS=4.5V and 11mΩ at VGS=10V. The maximum drain current (ID) can reach 75A. With its low on-resistance and high current handling capability, IPB057N06N-VB excels in the field of efficient power management and power conversion.
IPB057N06N-VB is a single-channel N-channel MOSFET provided by Infineon, using TO263 package. Its drain-source voltage (VDS) is 60V, and the maximum gate-source voltage (VGS) is ±20V, which is suitable for various medium-voltage high-current application scenarios. This MOSFET adopts advanced Trench technology and has excellent on-resistance performance, which is 12mΩ at VGS=4.5V and 11mΩ at VGS=10V. The maximum drain current (ID) can reach 75A. With its low on-resistance and high current handling capability, IPB057N06N-VB excels in the field of efficient power management and power conversion.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 11mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description of IPB057N06N-VB:
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 11mΩ @ VGS=10V
- **Maximum drain current (ID)**: 75A
- **Technology type**: Trench
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 11mΩ @ VGS=10V
- **Maximum drain current (ID)**: 75A
- **Technology type**: Trench
Domain and module applications：
III. Application fields and modules:
1. **Battery Management System (BMS)**:
In the battery management system, the low on-resistance of IPB057N06N-VB can effectively reduce energy loss and improve the energy efficiency of the battery. Its 60V VDS is suitable for handling the voltage of the battery pack, helping to achieve efficient charge and discharge control and improve the overall performance of the system.
2. **Power Tool Power Supply**:
This MOSFET can be used in the power management of power tools, especially for occasions that require fast response and high current handling. Its high current capability and low on-resistance ensure efficient energy transmission and stability of power tools under heavy load working conditions.
3. **Low Voltage DC-DC Converter**:
In low voltage DC-DC converter applications, IPB057N06N-VB can provide efficient power conversion. Its low on-resistance reduces the power consumption during the conversion process, and is particularly suitable for use in high-efficiency power systems such as communication equipment, power modules and server power supplies.
4. **Automotive Electronic Modules**:
In automotive electronics, such as modules for lighting control, power windows, and power seats, the IPB057N06N-VB can provide stable high-current switching control while maintaining low power consumption. The low on-resistance of this MOSFET can effectively reduce energy losses in the system and improve the overall efficiency of the vehicle's electrical system.
Through these application examples, the IPB057N06N-VB demonstrates its applicability in a variety of medium-voltage, high-current applications, especially in power management and efficient energy conversion scenarios.
1. **Battery Management System (BMS)**:
In the battery management system, the low on-resistance of IPB057N06N-VB can effectively reduce energy loss and improve the energy efficiency of the battery. Its 60V VDS is suitable for handling the voltage of the battery pack, helping to achieve efficient charge and discharge control and improve the overall performance of the system.
2. **Power Tool Power Supply**:
This MOSFET can be used in the power management of power tools, especially for occasions that require fast response and high current handling. Its high current capability and low on-resistance ensure efficient energy transmission and stability of power tools under heavy load working conditions.
3. **Low Voltage DC-DC Converter**:
In low voltage DC-DC converter applications, IPB057N06N-VB can provide efficient power conversion. Its low on-resistance reduces the power consumption during the conversion process, and is particularly suitable for use in high-efficiency power systems such as communication equipment, power modules and server power supplies.
4. **Automotive Electronic Modules**:
In automotive electronics, such as modules for lighting control, power windows, and power seats, the IPB057N06N-VB can provide stable high-current switching control while maintaining low power consumption. The low on-resistance of this MOSFET can effectively reduce energy losses in the system and improve the overall efficiency of the vehicle's electrical system.
Through these application examples, the IPB057N06N-VB demonstrates its applicability in a variety of medium-voltage, high-current applications, especially in power management and efficient energy conversion scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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