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IPB055N03L G-VB Product details
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Product Introduction
**IPB055N03L G-VB** is a high-performance N-Channel MOSFET, packaged in TO263 and manufactured based on advanced Trench technology. This MOSFET has extremely low on-resistance and excellent switching performance, and is particularly suitable for high current and low power consumption applications. Its maximum drain-source voltage is 30V, supports a continuous current of up to 98A, and can provide reliable performance in a variety of high-efficiency circuits.
**IPB055N03L G-VB** is a high-performance N-Channel MOSFET, packaged in TO263 and manufactured based on advanced Trench technology. This MOSFET has extremely low on-resistance and excellent switching performance, and is particularly suitable for high current and low power consumption applications. Its maximum drain-source voltage is 30V, supports a continuous current of up to 98A, and can provide reliable performance in a variety of high-efficiency circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ (at VGS = 4.5V)
- 2.4mΩ (at VGS = 10V)
- **Maximum continuous current (ID)**: 98A
- **Technology**: Trench
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ (at VGS = 4.5V)
- 2.4mΩ (at VGS = 10V)
- **Maximum continuous current (ID)**: 98A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules
1. **Power management**:
In power management systems, the low RDS(ON) characteristics of IPB055N03L G-VB can reduce power loss and improve efficiency. This makes it very suitable for use in efficient DC-DC converters, power distribution modules and power adapters, thereby improving the performance and stability of the overall system.
2. **Electric vehicles**:
In electric vehicles, the high current carrying capacity and low on-resistance of this MOSFET make it suitable for battery management systems and motor drive systems. For example, it can be used in battery switches and motor control modules to optimize power transmission and improve system reliability.
3. **High power switching applications**:
IPB055N03L G-VB is suitable for applications requiring high power switching, such as power amplifiers and load switches. This MOSFET can operate stably under high current loads and has low power consumption. It is suitable for power switching modules in industrial equipment to ensure high efficiency and stable operation.
4. **Industrial Automation**:
In industrial automation systems, the high current capability and low on-resistance of the IPB055N03L G-VB make it suitable for driving motors, sensors and other high-power devices. For example, it can be used in the drive circuit of an automation control system to provide efficient power conversion and control.
1. **Power management**:
In power management systems, the low RDS(ON) characteristics of IPB055N03L G-VB can reduce power loss and improve efficiency. This makes it very suitable for use in efficient DC-DC converters, power distribution modules and power adapters, thereby improving the performance and stability of the overall system.
2. **Electric vehicles**:
In electric vehicles, the high current carrying capacity and low on-resistance of this MOSFET make it suitable for battery management systems and motor drive systems. For example, it can be used in battery switches and motor control modules to optimize power transmission and improve system reliability.
3. **High power switching applications**:
IPB055N03L G-VB is suitable for applications requiring high power switching, such as power amplifiers and load switches. This MOSFET can operate stably under high current loads and has low power consumption. It is suitable for power switching modules in industrial equipment to ensure high efficiency and stable operation.
4. **Industrial Automation**:
In industrial automation systems, the high current capability and low on-resistance of the IPB055N03L G-VB make it suitable for driving motors, sensors and other high-power devices. For example, it can be used in the drive circuit of an automation control system to provide efficient power conversion and control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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