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IPB054N08N3 G-VB Product details
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IPB054N08N3 G-VB is a high-performance N-channel MOSFET in TO263 package, designed for high voltage and high current applications. It has a drain-source voltage (VDS) of 80V and a continuous drain current (ID) of up to 120A. The on-resistance of this MOSFET is only 6mΩ at VGS=10V and 10mΩ at VGS=4.5V, providing a low-power and high-efficiency current switching solution. It uses Trench technology to optimize switching characteristics and thermal management, and is suitable for high power density and high-efficiency power management systems.
IPB054N08N3 G-VB is a high-performance N-channel MOSFET in TO263 package, designed for high voltage and high current applications. It has a drain-source voltage (VDS) of 80V and a continuous drain current (ID) of up to 120A. The on-resistance of this MOSFET is only 6mΩ at VGS=10V and 10mΩ at VGS=4.5V, providing a low-power and high-efficiency current switching solution. It uses Trench technology to optimize switching characteristics and thermal management, and is suitable for high power density and high-efficiency power management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
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- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage(VDS)**: 80V
- **Gate-source voltage(VGS)**: ±20V
- **Threshold voltage(Vth)**: 3V
- **On-resistance(RDS(ON))**: 10mΩ @ VGS=4.5V
- **On-resistance(RDS(ON))**: 6mΩ @ VGS=10V
- **Drain current(ID)**: 120A
- **Technology**: Trench
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- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage(VDS)**: 80V
- **Gate-source voltage(VGS)**: ±20V
- **Threshold voltage(Vth)**: 3V
- **On-resistance(RDS(ON))**: 10mΩ @ VGS=4.5V
- **On-resistance(RDS(ON))**: 6mΩ @ VGS=10V
- **Drain current(ID)**: 120A
- **Technology**: Trench
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Domain and module applications：
*Application fields and module description**
1. **High-efficiency power converters**
In high-efficiency power converters, the low on-resistance and high current capability of the IPB054N08N3 G-VB make it very suitable for high-power DC-DC converters. This MOSFET can significantly reduce power loss and improve power conversion efficiency, and is widely used in servers, communication equipment, and power management systems.
2. **Electric vehicle (EV) drive system**
The IPB054N08N3 G-VB performs well in electric vehicle drive systems, especially in motor control and power switch modules. Its high voltage tolerance and low on-resistance can effectively support the driving requirements of high-power electric vehicle motors and improve the efficiency and stability of the overall system.
3. **Industrial motor drive**
In industrial motor drive applications, the high current handling capability and low on-resistance of the IPB054N08N3 G-VB make it an ideal switching element. It can drive high-power motors, ensure smooth operation and high efficiency of the motors, and is suitable for various automation equipment and motor control systems.
4. **Uninterruptible Power Supply (UPS)**
IPB054N08N3 G-VB is suitable for uninterruptible power supply systems. Its high current carrying capacity and low power consumption characteristics can ensure that the UPS system provides reliable backup power when power is interrupted. This MOSFET can effectively reduce energy loss and improve the overall efficiency and stability of the UPS system.
1. **High-efficiency power converters**
In high-efficiency power converters, the low on-resistance and high current capability of the IPB054N08N3 G-VB make it very suitable for high-power DC-DC converters. This MOSFET can significantly reduce power loss and improve power conversion efficiency, and is widely used in servers, communication equipment, and power management systems.
2. **Electric vehicle (EV) drive system**
The IPB054N08N3 G-VB performs well in electric vehicle drive systems, especially in motor control and power switch modules. Its high voltage tolerance and low on-resistance can effectively support the driving requirements of high-power electric vehicle motors and improve the efficiency and stability of the overall system.
3. **Industrial motor drive**
In industrial motor drive applications, the high current handling capability and low on-resistance of the IPB054N08N3 G-VB make it an ideal switching element. It can drive high-power motors, ensure smooth operation and high efficiency of the motors, and is suitable for various automation equipment and motor control systems.
4. **Uninterruptible Power Supply (UPS)**
IPB054N08N3 G-VB is suitable for uninterruptible power supply systems. Its high current carrying capacity and low power consumption characteristics can ensure that the UPS system provides reliable backup power when power is interrupted. This MOSFET can effectively reduce energy loss and improve the overall efficiency and stability of the UPS system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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