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IPB054N06N3 G-VB Product details
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IPB054N06N3 G-VB Product Introduction
IPB054N06N3 G-VB is a high-performance N-channel MOSFET in TO263 package, designed for high current and high efficiency applications. It uses Trench technology, has extremely low on-resistance (RDS(ON)) and excellent switching speed, and can operate stably under high current conditions. This makes it perform well in a variety of demanding power management and power conversion applications.
IPB054N06N3 G-VB is a high-performance N-channel MOSFET in TO263 package, designed for high current and high efficiency applications. It uses Trench technology, has extremely low on-resistance (RDS(ON)) and excellent switching speed, and can operate stably under high current conditions. This makes it perform well in a variety of demanding power management and power conversion applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
IPB054N06N3 G-VB Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate drive voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS=10V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench technology
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate drive voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS=10V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench technology
Domain and module applications：
Application fields and module examples
1. **Power management system**: In power conversion and management modules, IPB054N06N3 G-VB is suitable for applications such as DC-DC converters, point-of-load conversion (POL) modules. Due to its low on-resistance and high current capability, it can effectively reduce power loss and improve system efficiency, and is suitable for scenarios that require efficient power conversion.
2. **Automotive electronics**: This MOSFET can be used in battery management systems (BMS) and motor control modules for electric and hybrid vehicles. Its high current handling capability and low power consumption characteristics ensure reliability and high efficiency in vehicle power systems, supporting stable operation of vehicles under various working conditions.
3. **Industrial control**: In industrial control and power systems, IPB054N06N3 G-VB is suitable for applications such as motor drives, power management modules and inverters. Its high current and low on-resistance characteristics make it very suitable for high-efficiency power conversion and switching operations, ensuring efficient and stable operation of equipment.
4. **Consumer Electronics**: In high-performance computers, game consoles and other consumer electronics, the IPB054N06N3 G-VB can be used in voltage regulator modules and power switch systems. Its high switching speed and low power consumption characteristics help optimize the energy efficiency of the device, improving overall performance and user experience.
With its excellent electrical performance and wide applicability, the IPB054N06N3 G-VB is an ideal choice for high-power and high-efficiency applications.
1. **Power management system**: In power conversion and management modules, IPB054N06N3 G-VB is suitable for applications such as DC-DC converters, point-of-load conversion (POL) modules. Due to its low on-resistance and high current capability, it can effectively reduce power loss and improve system efficiency, and is suitable for scenarios that require efficient power conversion.
2. **Automotive electronics**: This MOSFET can be used in battery management systems (BMS) and motor control modules for electric and hybrid vehicles. Its high current handling capability and low power consumption characteristics ensure reliability and high efficiency in vehicle power systems, supporting stable operation of vehicles under various working conditions.
3. **Industrial control**: In industrial control and power systems, IPB054N06N3 G-VB is suitable for applications such as motor drives, power management modules and inverters. Its high current and low on-resistance characteristics make it very suitable for high-efficiency power conversion and switching operations, ensuring efficient and stable operation of equipment.
4. **Consumer Electronics**: In high-performance computers, game consoles and other consumer electronics, the IPB054N06N3 G-VB can be used in voltage regulator modules and power switch systems. Its high switching speed and low power consumption characteristics help optimize the energy efficiency of the device, improving overall performance and user experience.
With its excellent electrical performance and wide applicability, the IPB054N06N3 G-VB is an ideal choice for high-power and high-efficiency applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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