IPB052N04N G-VB Product details
Product introduction:
IPB052N04N G-VB is a high-performance single N-channel MOSFET in TO263 package, designed for medium to high voltage and high current applications. It has a maximum drain-source voltage (VDS) of 40V and a maximum on-current (ID) of 100A. The on-resistance of this MOSFET is 6mΩ at a gate drive voltage of 4.5V and 5mΩ at a gate drive voltage of 10V, showing its excellent electrical performance and low power consumption characteristics. Using advanced trench technology, the device provides efficient switching performance and excellent current control capability, suitable for high load applications and power management systems.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- @ VGS = 4.5V: 6mΩ
- @ VGS = 10V: 5mΩ
- **Maximum on-current (ID)**: 100A
- **Technology type**: Trench
Domain and module applications:
Technical support:
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