Featured Model

Last updated:

IPB052N04N G-VB Product details

Product introduction:

Product Introduction
IPB052N04N G-VB is a high-performance single N-channel MOSFET in TO263 package, designed for medium to high voltage and high current applications. It has a maximum drain-source voltage (VDS) of 40V and a maximum on-current (ID) of 100A. The on-resistance of this MOSFET is 6mΩ at a gate drive voltage of 4.5V and 5mΩ at a gate drive voltage of 10V, showing its excellent electrical performance and low power consumption characteristics. Using advanced trench technology, the device provides efficient switching performance and excellent current control capability, suitable for high load applications and power management systems.

File download

Download PDF document
Download now

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 40V 2.5V 100A 5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 40V 2.5V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 40V 2.5V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
Detailed parameter description
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- @ VGS = 4.5V: 6mΩ
- @ VGS = 10V: 5mΩ
- **Maximum on-current (ID)**: 100A
- **Technology type**: Trench

Domain and module applications:

Application fields and module examples: IPB052N04N G-VB MOSFET is widely used in multiple fields and modules due to its high current handling capability and low on-resistance. First, in power conversion modules such as DC-DC converters, this MOSFET can efficiently convert and manage current, reduce power loss, and improve system efficiency. Secondly, it is suitable for switching power supplies (SMPS) to provide stable current and low power consumption characteristics in power management systems. In addition, this MOSFET also performs well in the battery management system (BMS) of electric vehicles, and can work stably under higher voltage and current conditions to ensure the safety and reliability of the system. Its excellent conduction performance and low on-resistance enable it to play an important role in various power management and current control applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

WeChat

Topping

Sample Req
Online
Telephone
WeChat