中文
English
IPB051NE8N G-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
IPB051NE8N G-VB is a high-performance single N-channel MOSFET in TO263 package. Designed for high voltage and high current applications, this MOSFET has a drain-source voltage (VDS) of 80V and a gate voltage (VGS) of ±20V. Its turn-on voltage (Vth) is 3V, and its on-resistance (RDS(ON)) is 10mΩ@VGS=4.5V and 6mΩ@VGS=10V, supporting a drain current (ID) of up to 120A. Based on advanced trench technology, IPB051NE8N G-VB provides excellent conduction performance and low power consumption, and is suitable for a variety of high-power and high-efficiency electronic systems.
IPB051NE8N G-VB is a high-performance single N-channel MOSFET in TO263 package. Designed for high voltage and high current applications, this MOSFET has a drain-source voltage (VDS) of 80V and a gate voltage (VGS) of ±20V. Its turn-on voltage (Vth) is 3V, and its on-resistance (RDS(ON)) is 10mΩ@VGS=4.5V and 6mΩ@VGS=10V, supporting a drain current (ID) of up to 120A. Based on advanced trench technology, IPB051NE8N G-VB provides excellent conduction performance and low power consumption, and is suitable for a variety of high-power and high-efficiency electronic systems.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 80V
- **Gate voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 6mΩ @ VGS=10V
- **Drain current (ID)**: 120A
- **Technology**: Trench technology
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 80V
- **Gate voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 6mΩ @ VGS=10V
- **Drain current (ID)**: 120A
- **Technology**: Trench technology
Domain and module applications：
III. Application fields and module examples
1. **Electric vehicle (EV) battery management system**: IPB051NE8N G-VB is suitable for battery management systems in electric vehicles. In these systems, the high current handling capability and low on-resistance of MOSFET help effectively manage the battery charging and discharging process, improving the overall efficiency and safety of the system.
2. **High-efficiency switching power supply**: In high-efficiency switching power supply modules, such as server power supplies and industrial power supplies, IPB051NE8N G-VB can improve the energy efficiency and stability of the system and reduce energy loss due to its low power consumption characteristics and high current capability.
3. **Motor drive and control**: In power tools and industrial motor drive systems, the high current carrying capacity and low RDS(ON) capability of MOSFET ensures stable operation and high efficiency of the motor, which is suitable for high-load motor control applications.
4. **Renewable energy systems (such as photovoltaic inverters)**: In photovoltaic inverters, the excellent conduction performance and high voltage carrying capacity of IPB051NE8N G-VB enable it to effectively handle high currents from solar panels to the grid, improving the overall energy efficiency and reliability of the system.
Due to its excellent performance under high voltage and high current conditions, IPB051NE8N G-VB is an ideal choice for high-power electronic systems, which can effectively meet the needs of various high-efficiency and high-reliability applications.
1. **Electric vehicle (EV) battery management system**: IPB051NE8N G-VB is suitable for battery management systems in electric vehicles. In these systems, the high current handling capability and low on-resistance of MOSFET help effectively manage the battery charging and discharging process, improving the overall efficiency and safety of the system.
2. **High-efficiency switching power supply**: In high-efficiency switching power supply modules, such as server power supplies and industrial power supplies, IPB051NE8N G-VB can improve the energy efficiency and stability of the system and reduce energy loss due to its low power consumption characteristics and high current capability.
3. **Motor drive and control**: In power tools and industrial motor drive systems, the high current carrying capacity and low RDS(ON) capability of MOSFET ensures stable operation and high efficiency of the motor, which is suitable for high-load motor control applications.
4. **Renewable energy systems (such as photovoltaic inverters)**: In photovoltaic inverters, the excellent conduction performance and high voltage carrying capacity of IPB051NE8N G-VB enable it to effectively handle high currents from solar panels to the grid, improving the overall energy efficiency and reliability of the system.
Due to its excellent performance under high voltage and high current conditions, IPB051NE8N G-VB is an ideal choice for high-power electronic systems, which can effectively meet the needs of various high-efficiency and high-reliability applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
