中文
English
IPB050N06N G-VB Product details
Back to previous pageProduct introduction：
Product Introduction:
IPB050N06N G-VB is a high-performance single N-channel MOSFET in TO263 package, designed for applications requiring high current and high efficiency. This MOSFET has a drain-source voltage (VDS) up to 60V and low on-resistance (RDS(ON)), which makes it perform well in power-intensive applications. Its Trench technology provides excellent switching performance and low power consumption, making it ideal for various power management and power conversion scenarios.
IPB050N06N G-VB is a high-performance single N-channel MOSFET in TO263 package, designed for applications requiring high current and high efficiency. This MOSFET has a drain-source voltage (VDS) up to 60V and low on-resistance (RDS(ON)), which makes it perform well in power-intensive applications. Its Trench technology provides excellent switching performance and low power consumption, making it ideal for various power management and power conversion scenarios.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description:
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ@VGS=10V
- **Drain current (ID)**: 150A
- **Technology**: Trench technology with low on-resistance and high switching speed
- **Thermal resistance (Rth(ja))**: About 62 K/W (typical value)
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ@VGS=10V
- **Drain current (ID)**: 150A
- **Technology**: Trench technology with low on-resistance and high switching speed
- **Thermal resistance (Rth(ja))**: About 62 K/W (typical value)
Domain and module applications：
Applicable fields and module applications:
1. **High-efficiency switching power supply (SMPS)**: The low on-resistance and high current capability of IPB050N06N G-VB make it very suitable for use in switching power supplies. In these applications, it can significantly reduce power consumption and heat, improve the overall power conversion efficiency, and is suitable for high-efficiency power supply designs such as power modules, converters and inverters.
2. **Electric vehicle (EV) battery management system**: This MOSFET can provide reliable current control and high efficiency in the battery management system of electric vehicles. Its high voltage tolerance and low on-resistance enable it to maintain stable performance during charging and discharging, and effectively improve the overall efficiency of the battery system.
3. **Server power module**: In the power modules of data centers and servers, the high current handling capability and low power consumption characteristics of IPB050N06N G-VB enable it to efficiently manage high-power loads, ensure power stability and efficiency, and are suitable for high-performance computing and data processing applications.
4. **Industrial Automation Equipment**: In industrial automation equipment, such as inverters and servo systems, this MOSFET can effectively handle high current loads and provide stable current control. Its low on-resistance and high switching speed are suitable for motor drives and other industrial control applications, improving the operating efficiency and reliability of equipment.
5. **DC-DC Converter**: The low on-resistance and high current capability of IPB050N06N G-VB make it an ideal choice in DC-DC converters. It can improve energy conversion efficiency, reduce power consumption and heat generation, and is suitable for power management and power conditioning modules.
1. **High-efficiency switching power supply (SMPS)**: The low on-resistance and high current capability of IPB050N06N G-VB make it very suitable for use in switching power supplies. In these applications, it can significantly reduce power consumption and heat, improve the overall power conversion efficiency, and is suitable for high-efficiency power supply designs such as power modules, converters and inverters.
2. **Electric vehicle (EV) battery management system**: This MOSFET can provide reliable current control and high efficiency in the battery management system of electric vehicles. Its high voltage tolerance and low on-resistance enable it to maintain stable performance during charging and discharging, and effectively improve the overall efficiency of the battery system.
3. **Server power module**: In the power modules of data centers and servers, the high current handling capability and low power consumption characteristics of IPB050N06N G-VB enable it to efficiently manage high-power loads, ensure power stability and efficiency, and are suitable for high-performance computing and data processing applications.
4. **Industrial Automation Equipment**: In industrial automation equipment, such as inverters and servo systems, this MOSFET can effectively handle high current loads and provide stable current control. Its low on-resistance and high switching speed are suitable for motor drives and other industrial control applications, improving the operating efficiency and reliability of equipment.
5. **DC-DC Converter**: The low on-resistance and high current capability of IPB050N06N G-VB make it an ideal choice in DC-DC converters. It can improve energy conversion efficiency, reduce power consumption and heat generation, and is suitable for power management and power conditioning modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
