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IPB04N03LB G-VB Product details
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1. Product Introduction
**IPB04N03LB G-VB** is a high-performance single N-channel MOSFET in TO263 package. Designed for high current and high-efficiency applications, the device uses advanced Trench technology to provide superior current handling capabilities and low power consumption. IPB04N03LB G-VB MOSFET supports a maximum drain-source voltage (VDS) of 30V and has an on-resistance (RDS(ON)) as low as 2.3mΩ at a gate-source voltage (VGS) of 10V, 3.2mΩ at a gate-source voltage of 4.5V, and a maximum continuous drain current of 150A. This makes it ideal for providing high efficiency and reliability in high current applications.
**IPB04N03LB G-VB** is a high-performance single N-channel MOSFET in TO263 package. Designed for high current and high-efficiency applications, the device uses advanced Trench technology to provide superior current handling capabilities and low power consumption. IPB04N03LB G-VB MOSFET supports a maximum drain-source voltage (VDS) of 30V and has an on-resistance (RDS(ON)) as low as 2.3mΩ at a gate-source voltage (VGS) of 10V, 3.2mΩ at a gate-source voltage of 4.5V, and a maximum continuous drain current of 150A. This makes it ideal for providing high efficiency and reliability in high current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | 2.3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description
- **Model**: IPB04N03LB G-VB
- **Package**: TO263
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3.2mΩ @ VGS=4.5V
- 2.3mΩ @ VGS=10V
- **Continuous drain current (ID)**: 150A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 175°C
- **Typical switching time**: With fast switching characteristics, suitable for high frequency operation
- **Model**: IPB04N03LB G-VB
- **Package**: TO263
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3.2mΩ @ VGS=4.5V
- 2.3mΩ @ VGS=10V
- **Continuous drain current (ID)**: 150A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 175°C
- **Typical switching time**: With fast switching characteristics, suitable for high frequency operation
Domain and module applications：
3. Application fields and modules
**IPB04N03LB G-VB** MOSFET is designed to excel in multiple high current and high efficiency applications. Here are some typical application scenarios:
- **Power management system**: In high-efficiency DC-DC converters, IPB04N03LB G-VB can effectively reduce power consumption and improve conversion efficiency, and is suitable for power management modules that require high current and high efficiency, such as industrial power supplies, server power supplies, and power adapters.
- **Electric Vehicles (EV)**: This MOSFET can be used in battery management systems and motor controllers to handle high currents and reduce energy losses, improving the overall efficiency and endurance of battery and motor systems.
- **Motor drive**: In motor drive modules that require high current and low power consumption, such as industrial automation equipment and robot control systems, IPB04N03LB G-VB can provide stable power drive and reliable current switching.
- **Power Amplifier**: This MOSFET performs well in high-power amplifier applications, supporting high currents and providing low conduction losses, ensuring stable and efficient operation of the power amplifier.
- **Consumer Electronics**: In high-performance battery chargers and other small power devices, the IPB04N03LB G-VB can effectively reduce power consumption and improve energy conversion efficiency to meet the high-performance needs of modern consumer electronics.
Its high current handling capability and low on-resistance make the IPB04N03LB G-VB an ideal choice for improving system efficiency and stability in these application scenarios.
**IPB04N03LB G-VB** MOSFET is designed to excel in multiple high current and high efficiency applications. Here are some typical application scenarios:
- **Power management system**: In high-efficiency DC-DC converters, IPB04N03LB G-VB can effectively reduce power consumption and improve conversion efficiency, and is suitable for power management modules that require high current and high efficiency, such as industrial power supplies, server power supplies, and power adapters.
- **Electric Vehicles (EV)**: This MOSFET can be used in battery management systems and motor controllers to handle high currents and reduce energy losses, improving the overall efficiency and endurance of battery and motor systems.
- **Motor drive**: In motor drive modules that require high current and low power consumption, such as industrial automation equipment and robot control systems, IPB04N03LB G-VB can provide stable power drive and reliable current switching.
- **Power Amplifier**: This MOSFET performs well in high-power amplifier applications, supporting high currents and providing low conduction losses, ensuring stable and efficient operation of the power amplifier.
- **Consumer Electronics**: In high-performance battery chargers and other small power devices, the IPB04N03LB G-VB can effectively reduce power consumption and improve energy conversion efficiency to meet the high-performance needs of modern consumer electronics.
Its high current handling capability and low on-resistance make the IPB04N03LB G-VB an ideal choice for improving system efficiency and stability in these application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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