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IPB04N03LA-VB Product details
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1. IPB04N03LA-VB MOSFET Product Introduction
IPB04N03LA-VB is a high-performance N-channel power MOSFET in TO-263 package, designed for high current and high efficiency switching applications. This MOSFET has a maximum drain-source voltage of 30V and can withstand currents up to 98A, suitable for use in environments requiring low on-resistance and high current handling capabilities. It uses advanced trench technology to achieve excellent switching performance and extremely low on-resistance, ensuring outstanding performance in power conversion and switching operations.
IPB04N03LA-VB is a high-performance N-channel power MOSFET in TO-263 package, designed for high current and high efficiency switching applications. This MOSFET has a maximum drain-source voltage of 30V and can withstand currents up to 98A, suitable for use in environments requiring low on-resistance and high current handling capabilities. It uses advanced trench technology to achieve excellent switching performance and extremely low on-resistance, ensuring outstanding performance in power conversion and switching operations.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description of IPB04N03LA-VB MOSFET
- **Package type**: TO-263
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS=4.5V
- 2.4mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 98A
- **Technology**: Trench technology
- **Package type**: TO-263
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS=4.5V
- 2.4mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 98A
- **Technology**: Trench technology
Domain and module applications：
III. Application fields and module examples of IPB04N03LA-VB
1. **Electric vehicle (EV) control system**: The low on-resistance and high current handling capability of IPB04N03LA-VB make it excel in battery management systems and motor drive modules of electric vehicles. These systems require efficient power switches to optimize battery usage efficiency and improve overall system performance, and IPB04N03LA-VB can effectively meet these requirements.
2. **DC-DC converter**: In DC-DC converters, IPB04N03LA-VB is used in the synchronous rectification stage, and its low on-resistance helps reduce power losses and improve conversion efficiency. This MOSFET is particularly suitable for high-efficiency power modules such as server power supplies and power management systems in communication equipment.
3. **Industrial power system**: In industrial power and uninterruptible power supply (UPS) systems, IPB04N03LA-VB can be used for switching applications that handle high currents, ensuring stable power management and efficient power conversion. Its low on-resistance and high current carrying capability make it ideal for these demanding applications.
4. **Consumer Electronics**: In consumer electronics such as white goods and gaming devices, the IPB04N03LA-VB can be used in power management modules to improve power conversion efficiency and reduce power losses. Its superior switching performance helps optimize the overall energy efficiency of the device.
In summary, the IPB04N03LA-VB MOSFET is widely used in electric vehicles, power converters, industrial power supplies, and consumer electronics with its high current handling capability and low on-resistance, providing an efficient power switching solution.
1. **Electric vehicle (EV) control system**: The low on-resistance and high current handling capability of IPB04N03LA-VB make it excel in battery management systems and motor drive modules of electric vehicles. These systems require efficient power switches to optimize battery usage efficiency and improve overall system performance, and IPB04N03LA-VB can effectively meet these requirements.
2. **DC-DC converter**: In DC-DC converters, IPB04N03LA-VB is used in the synchronous rectification stage, and its low on-resistance helps reduce power losses and improve conversion efficiency. This MOSFET is particularly suitable for high-efficiency power modules such as server power supplies and power management systems in communication equipment.
3. **Industrial power system**: In industrial power and uninterruptible power supply (UPS) systems, IPB04N03LA-VB can be used for switching applications that handle high currents, ensuring stable power management and efficient power conversion. Its low on-resistance and high current carrying capability make it ideal for these demanding applications.
4. **Consumer Electronics**: In consumer electronics such as white goods and gaming devices, the IPB04N03LA-VB can be used in power management modules to improve power conversion efficiency and reduce power losses. Its superior switching performance helps optimize the overall energy efficiency of the device.
In summary, the IPB04N03LA-VB MOSFET is widely used in electric vehicles, power converters, industrial power supplies, and consumer electronics with its high current handling capability and low on-resistance, providing an efficient power switching solution.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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