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IPB04N03LA G-VB Product details
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IPB04N03LA G-VB Product Introduction
IPB04N03LA G-VB is a high-performance single-channel N-type power MOSFET in TO263 package, designed for high-efficiency switching and low-power applications. This MOSFET provides a drain-source voltage (VDS) of up to 30V and a gate-source voltage (VGS) of ±20V, as well as a low threshold voltage (Vth) of 1.7V, ensuring efficient switching even at low gate drive voltages. Utilizing advanced Trench technology, the IPB04N03LA G-VB has extremely low on-resistance, which can significantly reduce power losses and improve the overall efficiency of the system. Its maximum drain current is 98A, making it an excellent performer in high-current applications.
IPB04N03LA G-VB is a high-performance single-channel N-type power MOSFET in TO263 package, designed for high-efficiency switching and low-power applications. This MOSFET provides a drain-source voltage (VDS) of up to 30V and a gate-source voltage (VGS) of ±20V, as well as a low threshold voltage (Vth) of 1.7V, ensuring efficient switching even at low gate drive voltages. Utilizing advanced Trench technology, the IPB04N03LA G-VB has extremely low on-resistance, which can significantly reduce power losses and improve the overall efficiency of the system. Its maximum drain current is 98A, making it an excellent performer in high-current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
IPB04N03LA G-VB parameter description
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ@VGS=4.5V
- 2.4mΩ@VGS=10V
- **Drain current (ID)**: 98A
- **Technology**: Trench technology
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ@VGS=4.5V
- 2.4mΩ@VGS=10V
- **Drain current (ID)**: 98A
- **Technology**: Trench technology
Domain and module applications：
Application fields and modules of IPB04N03LA G-VB
The low on-resistance and high current handling capability of IPB04N03LA G-VB make it widely used in multiple fields and modules:
1. **Automotive electronic system**: In the power control system of the car, IPB04N03LA G-VB can be used in high-power applications such as electric power steering system, electric brake control and car lighting system. Its efficient switching performance and low power consumption characteristics can improve the overall reliability and efficiency of automotive electronic systems.
2. **DC-DC converter**: In various DC-DC converters (such as buck and boost converters), the low on-resistance of this MOSFET helps to improve conversion efficiency and reduce energy loss, thereby optimizing power management and improving system performance.
3. **Power tools**: In power tools and motor drive systems, the high current handling capability and low power consumption provided by IPB04N03LA G-VB make it suitable for power control under high load conditions, ensuring stable operation and long-term reliable use of tools.
4. **Industrial motor control**: The application of this MOSFET in industrial control systems, such as motor drive modules, can provide efficient power transmission and precise control, adapt to various industrial automation needs, and improve system performance and stability.
5. **Power management system**: In power management of computers and data centers, the high efficiency and low power consumption of IPB04N03LA G-VB can optimize the overall efficiency of the power system, reduce heat generation, and improve the reliability and long life of the power system.
The low on-resistance and high current handling capability of IPB04N03LA G-VB make it widely used in multiple fields and modules:
1. **Automotive electronic system**: In the power control system of the car, IPB04N03LA G-VB can be used in high-power applications such as electric power steering system, electric brake control and car lighting system. Its efficient switching performance and low power consumption characteristics can improve the overall reliability and efficiency of automotive electronic systems.
2. **DC-DC converter**: In various DC-DC converters (such as buck and boost converters), the low on-resistance of this MOSFET helps to improve conversion efficiency and reduce energy loss, thereby optimizing power management and improving system performance.
3. **Power tools**: In power tools and motor drive systems, the high current handling capability and low power consumption provided by IPB04N03LA G-VB make it suitable for power control under high load conditions, ensuring stable operation and long-term reliable use of tools.
4. **Industrial motor control**: The application of this MOSFET in industrial control systems, such as motor drive modules, can provide efficient power transmission and precise control, adapt to various industrial automation needs, and improve system performance and stability.
5. **Power management system**: In power management of computers and data centers, the high efficiency and low power consumption of IPB04N03LA G-VB can optimize the overall efficiency of the power system, reduce heat generation, and improve the reliability and long life of the power system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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