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IPB04CNE8N G-VB Product details
Back to previous pageProduct introduction：
1. IPB04CNE8N G-VB Product Introduction:
IPB04CNE8N G-VB is a high-performance single-channel N-channel MOSFET launched by Infineon, packaged in TO263. This MOSFET is designed for high-current and high-efficiency applications, with a drain-source voltage (VDS) of up to 80V and a maximum drain current (ID) of 120A. IPB04CNE8N G-VB has excellent on-resistance performance, with an on-resistance of 6mΩ when VGS=10V and 10mΩ when VGS=4.5V. Using Trench technology, this MOSFET provides low conduction loss and high switching speed, suitable for use in various high-power applications.
IPB04CNE8N G-VB is a high-performance single-channel N-channel MOSFET launched by Infineon, packaged in TO263. This MOSFET is designed for high-current and high-efficiency applications, with a drain-source voltage (VDS) of up to 80V and a maximum drain current (ID) of 120A. IPB04CNE8N G-VB has excellent on-resistance performance, with an on-resistance of 6mΩ when VGS=10V and 10mΩ when VGS=4.5V. Using Trench technology, this MOSFET provides low conduction loss and high switching speed, suitable for use in various high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. IPB04CNE8N G-VB Detailed parameter description:
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 6mΩ @ VGS=10V
- **Maximum drain current (ID)**: 120A
- **Technology type**: Trench
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 6mΩ @ VGS=10V
- **Maximum drain current (ID)**: 120A
- **Technology type**: Trench
Domain and module applications：
3. Application fields and modules:
1. **High-efficiency DC-DC converters**:
IPB04CNE8N G-VB is suitable for high-efficiency DC-DC converters. Its low on-resistance and high current handling capability enable it to reduce power consumption and heat generation during power conversion. This is particularly important in data centers, telecommunications equipment, and power management systems, helping to improve overall system efficiency and reliability.
2. **Electric vehicle (EV) system**:
In electric vehicles, this MOSFET can be used in motor controllers, chargers, and power distribution modules. Its high current carrying capacity and low on-resistance enable it to effectively handle the high current demands in electric vehicles, improving the energy efficiency and stability of the system.
3. **Industrial power management**:
IPB04CNE8N G-VB performs well in industrial power management systems and can be used for motor drives, power conversion, and high-power switching modules. Its excellent on-performance and high current handling capability ensure stability and efficiency in industrial applications.
4. **Uninterruptible Power Supply (UPS)**:
In UPS systems, this MOSFET is suitable for handling high current switching and power conversion to ensure stable power supply during power outages. Its low on-resistance and high switching speed help improve the overall efficiency of the UPS system and reduce system power consumption and heat generation.
Through these application examples, IPB04CNE8N G-VB demonstrates its wide applicability in high current, high power and high efficiency applications, providing a reliable solution for power management and high power conversion.
1. **High-efficiency DC-DC converters**:
IPB04CNE8N G-VB is suitable for high-efficiency DC-DC converters. Its low on-resistance and high current handling capability enable it to reduce power consumption and heat generation during power conversion. This is particularly important in data centers, telecommunications equipment, and power management systems, helping to improve overall system efficiency and reliability.
2. **Electric vehicle (EV) system**:
In electric vehicles, this MOSFET can be used in motor controllers, chargers, and power distribution modules. Its high current carrying capacity and low on-resistance enable it to effectively handle the high current demands in electric vehicles, improving the energy efficiency and stability of the system.
3. **Industrial power management**:
IPB04CNE8N G-VB performs well in industrial power management systems and can be used for motor drives, power conversion, and high-power switching modules. Its excellent on-performance and high current handling capability ensure stability and efficiency in industrial applications.
4. **Uninterruptible Power Supply (UPS)**:
In UPS systems, this MOSFET is suitable for handling high current switching and power conversion to ensure stable power supply during power outages. Its low on-resistance and high switching speed help improve the overall efficiency of the UPS system and reduce system power consumption and heat generation.
Through these application examples, IPB04CNE8N G-VB demonstrates its wide applicability in high current, high power and high efficiency applications, providing a reliable solution for power management and high power conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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