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IPB049NE7N3 G-VB Product details
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Product Introduction
**IPB049NE7N3 G-VB** is a high-performance N-Channel MOSFET in TO263 package, manufactured based on advanced Trench technology. This MOSFET has excellent switching performance and low on-resistance, making it very suitable for applications requiring high current and low power consumption. Its maximum drain-source voltage is 80V, and it can support a continuous current of up to 120A, making it suitable for a variety of high-power switching applications.
**IPB049NE7N3 G-VB** is a high-performance N-Channel MOSFET in TO263 package, manufactured based on advanced Trench technology. This MOSFET has excellent switching performance and low on-resistance, making it very suitable for applications requiring high current and low power consumption. Its maximum drain-source voltage is 80V, and it can support a continuous current of up to 120A, making it suitable for a variety of high-power switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ (at VGS = 4.5V)
- 6mΩ (at VGS = 10V)
- **Maximum continuous current (ID)**: 120A
- **Technology**: Trench
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ (at VGS = 4.5V)
- 6mΩ (at VGS = 10V)
- **Maximum continuous current (ID)**: 120A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules
1. **Power converter**:
In power converters and power management modules, the low RDS(ON) characteristics of the IPB049NE7N3 G-VB can significantly reduce power losses, thereby improving the efficiency of the overall system. For example, it can be used in DC-DC converters to ensure high efficiency and low heat dissipation, thereby improving the stability and reliability of the system.
2. **Electric vehicles**:
In the battery management system and motor drive system of electric vehicles, the high current carrying capacity and low on-resistance of this MOSFET enable it to effectively control high power currents and improve the working efficiency and safety of the system. For example, it can be used in battery switching switches and motor control modules of electric vehicles.
3. **High power switching applications**:
For applications that require high power switching, such as power amplifiers and high power load control, the IPB049NE7N3 G-VB can stably handle large current loads while maintaining low power consumption. For example, it can be used in power switch modules of industrial equipment to ensure reliable operation and high efficiency.
4. **Industrial Control Systems**:
In industrial automation and control systems, the high current capability and low on-resistance of the IPB049NE7N3 G-VB make it suitable for driving various industrial devices such as motors and sensors. For example, it can be used in motor drive systems and high-power control units to achieve efficient power conversion and control.
1. **Power converter**:
In power converters and power management modules, the low RDS(ON) characteristics of the IPB049NE7N3 G-VB can significantly reduce power losses, thereby improving the efficiency of the overall system. For example, it can be used in DC-DC converters to ensure high efficiency and low heat dissipation, thereby improving the stability and reliability of the system.
2. **Electric vehicles**:
In the battery management system and motor drive system of electric vehicles, the high current carrying capacity and low on-resistance of this MOSFET enable it to effectively control high power currents and improve the working efficiency and safety of the system. For example, it can be used in battery switching switches and motor control modules of electric vehicles.
3. **High power switching applications**:
For applications that require high power switching, such as power amplifiers and high power load control, the IPB049NE7N3 G-VB can stably handle large current loads while maintaining low power consumption. For example, it can be used in power switch modules of industrial equipment to ensure reliable operation and high efficiency.
4. **Industrial Control Systems**:
In industrial automation and control systems, the high current capability and low on-resistance of the IPB049NE7N3 G-VB make it suitable for driving various industrial devices such as motors and sensors. For example, it can be used in motor drive systems and high-power control units to achieve efficient power conversion and control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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