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IPB049N06L3 G-VB Product details
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IPB049N06L3 G-VB is a high-performance N-channel MOSFET in TO263 package, designed for high current and low on-resistance applications. This MOSFET provides 60V drain-source voltage (VDS) and up to 150A drain current (ID), with an on-resistance as low as 4mΩ@VGS=10V. It uses advanced Trench technology to ensure excellent switching performance and high efficiency, suitable for high power and high efficiency power management and power conversion applications.
IPB049N06L3 G-VB is a high-performance N-channel MOSFET in TO263 package, designed for high current and low on-resistance applications. This MOSFET provides 60V drain-source voltage (VDS) and up to 150A drain current (ID), with an on-resistance as low as 4mΩ@VGS=10V. It uses advanced Trench technology to ensure excellent switching performance and high efficiency, suitable for high power and high efficiency power management and power conversion applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
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- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage(VDS)**: 60V
- **Gate-source voltage(VGS)**: ±20V
- **Threshold voltage(Vth)**: 3V
- **On-resistance(RDS(ON))**: 4mΩ @ VGS=10V
- **Drain current(ID)**: 150A
- **Technology**: Trench
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- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage(VDS)**: 60V
- **Gate-source voltage(VGS)**: ±20V
- **Threshold voltage(Vth)**: 3V
- **On-resistance(RDS(ON))**: 4mΩ @ VGS=10V
- **Drain current(ID)**: 150A
- **Technology**: Trench
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Domain and module applications：
*Application fields and module description**
1. **High-efficiency power converters**
In high-efficiency power converters, the IPB049N06L3 G-VB can significantly reduce power loss and provide stable power output. Its low on-resistance and high current carrying capacity make it ideal for modern power modules such as server power supplies and industrial power systems to improve overall efficiency and reliability.
2. **Electric vehicle (EV) charging system**
For electric vehicle charging systems, the IPB049N06L3 G-VB provides excellent current handling capabilities and low heat generation, which can effectively support high-power charging processes. It ensures high efficiency and reliability during the charging process, improving the charging speed and overall performance of electric vehicles.
3. **Industrial motor drive**
In industrial motor drive applications, this MOSFET can be used to drive high-power motors or other high-current loads. Due to its high drain current capability and low on-resistance, the IPB049N06L3 G-VB ensures smooth operation and high efficiency of motors, and is suitable for various types of industrial automation equipment.
4. **Uninterruptible Power Supply (UPS)**
In an uninterruptible power supply system, the IPB049N06L3 G-VB can handle high current loads and provide reliable backup power. Its low on-resistance helps reduce power loss, thereby improving the efficiency and stability of the UPS system, ensuring that equipment can continue to be powered during power outages.
1. **High-efficiency power converters**
In high-efficiency power converters, the IPB049N06L3 G-VB can significantly reduce power loss and provide stable power output. Its low on-resistance and high current carrying capacity make it ideal for modern power modules such as server power supplies and industrial power systems to improve overall efficiency and reliability.
2. **Electric vehicle (EV) charging system**
For electric vehicle charging systems, the IPB049N06L3 G-VB provides excellent current handling capabilities and low heat generation, which can effectively support high-power charging processes. It ensures high efficiency and reliability during the charging process, improving the charging speed and overall performance of electric vehicles.
3. **Industrial motor drive**
In industrial motor drive applications, this MOSFET can be used to drive high-power motors or other high-current loads. Due to its high drain current capability and low on-resistance, the IPB049N06L3 G-VB ensures smooth operation and high efficiency of motors, and is suitable for various types of industrial automation equipment.
4. **Uninterruptible Power Supply (UPS)**
In an uninterruptible power supply system, the IPB049N06L3 G-VB can handle high current loads and provide reliable backup power. Its low on-resistance helps reduce power loss, thereby improving the efficiency and stability of the UPS system, ensuring that equipment can continue to be powered during power outages.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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