中文
English
IPB042N10N3 G-VB Product details
Back to previous pageProduct introduction：
Product Introduction
IPB042N10N3 G-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high voltage and high current applications. The MOSFET has a drain-source voltage (VDS) of up to 100V and a maximum on-current (ID) of 140A. Its low on-resistance is 4mΩ (at VGS = 10V), ensuring excellent electrical performance in high-power applications. Using trench technology, the device provides excellent switching performance and low power consumption, suitable for electronic systems that require efficient current control and voltage processing.
IPB042N10N3 G-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high voltage and high current applications. The MOSFET has a drain-source voltage (VDS) of up to 100V and a maximum on-current (ID) of 140A. Its low on-resistance is 4mΩ (at VGS = 10V), ensuring excellent electrical performance in high-power applications. Using trench technology, the device provides excellent switching performance and low power consumption, suitable for electronic systems that require efficient current control and voltage processing.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 3V | 140A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 3V | 140A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 3V | 140A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- @ VGS = 10V: 4mΩ
- **Maximum on-current (ID)**: 140A
- **Technology type**: Trench
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- @ VGS = 10V: 4mΩ
- **Maximum on-current (ID)**: 140A
- **Technology type**: Trench
Domain and module applications：
Application fields and module examples: The high voltage and high current handling capabilities of the IPB042N10N3 G-VB MOSFET make it widely used in multiple fields and modules. First, in high-voltage DC-DC converters, this MOSFET can efficiently manage current and maintain low losses, suitable for power conversion systems that require high stability and high efficiency. Secondly, in switching power supplies (SMPS), its low on-resistance helps reduce power losses and improve the efficiency of the overall system. In addition, this MOSFET is also suitable for battery management systems (BMS) in electric vehicles, which can reliably control current in high-voltage environments to ensure system stability and safety. Due to its excellent conduction performance and low power consumption characteristics, it can provide excellent performance in various power management and power control applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
