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IPB042N03L G-VB Product details
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1. Product Introduction
IPB042N03L G-VB is a high-efficiency single N-channel MOSFET in TO263 package. With a drain-source voltage (VDS) of 30V and a gate voltage (VGS) of ±20V, the MOSFET can operate stably under high current conditions. Its turn-on voltage (Vth) is 1.7V, and its low on-resistance (RDS(ON)) is 3.2mΩ@VGS=4.5V and 2.3mΩ@VGS=10V, supporting a drain current (ID) of up to 150A. Based on advanced trench technology, IPB042N03L G-VB has excellent conduction performance and energy efficiency, and is suitable for high-power and high-efficiency applications.
IPB042N03L G-VB is a high-efficiency single N-channel MOSFET in TO263 package. With a drain-source voltage (VDS) of 30V and a gate voltage (VGS) of ±20V, the MOSFET can operate stably under high current conditions. Its turn-on voltage (Vth) is 1.7V, and its low on-resistance (RDS(ON)) is 3.2mΩ@VGS=4.5V and 2.3mΩ@VGS=10V, supporting a drain current (ID) of up to 150A. Based on advanced trench technology, IPB042N03L G-VB has excellent conduction performance and energy efficiency, and is suitable for high-power and high-efficiency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | 2.3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3.2mΩ @ VGS=4.5V
- 2.3mΩ @ VGS=10V
- **Drain current (ID)**: 150A
- **Technology**: Trench technology
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3.2mΩ @ VGS=4.5V
- 2.3mΩ @ VGS=10V
- **Drain current (ID)**: 150A
- **Technology**: Trench technology
Domain and module applications：
III. Application fields and module examples
1. **DC-DC converter**: IPB042N03L G-VB is particularly suitable for DC-DC converters, such as computer power supplies and industrial power supplies. In these applications, its low on-resistance and high current carrying capacity can effectively reduce power loss and improve conversion efficiency, thereby enhancing system performance and stability.
2. **Power tools**: In motor control systems for power tools and household appliances, this MOSFET can be used for motor drive. Its excellent on-performance and high current handling capacity can improve the power output and service life of the tool and meet high-load working requirements.
3. **Automotive electronics**: In automotive electronic systems, IPB042N03L G-VB can be applied to battery management systems and power distribution modules. Its low power consumption and high current capability help improve system reliability and energy efficiency, which is especially important for electric vehicles and hybrid vehicles.
4. **Switching power supply**: This MOSFET is also suitable for switching power supply modules, such as adapters and power converters. Low RDS(ON) can reduce power loss and improve the overall energy efficiency of the system, making it suitable for use in applications requiring high efficiency and high reliability.
Due to its low on-resistance, high current carrying capacity and advanced Trench technology, IPB042N03L G-VB performs well in various high-power and high-efficiency applications, ensuring system stability and efficiency.
1. **DC-DC converter**: IPB042N03L G-VB is particularly suitable for DC-DC converters, such as computer power supplies and industrial power supplies. In these applications, its low on-resistance and high current carrying capacity can effectively reduce power loss and improve conversion efficiency, thereby enhancing system performance and stability.
2. **Power tools**: In motor control systems for power tools and household appliances, this MOSFET can be used for motor drive. Its excellent on-performance and high current handling capacity can improve the power output and service life of the tool and meet high-load working requirements.
3. **Automotive electronics**: In automotive electronic systems, IPB042N03L G-VB can be applied to battery management systems and power distribution modules. Its low power consumption and high current capability help improve system reliability and energy efficiency, which is especially important for electric vehicles and hybrid vehicles.
4. **Switching power supply**: This MOSFET is also suitable for switching power supply modules, such as adapters and power converters. Low RDS(ON) can reduce power loss and improve the overall energy efficiency of the system, making it suitable for use in applications requiring high efficiency and high reliability.
Due to its low on-resistance, high current carrying capacity and advanced Trench technology, IPB042N03L G-VB performs well in various high-power and high-efficiency applications, ensuring system stability and efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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