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IPB041N04N G-VB Product details
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Product Introduction:
IPB041N04N G-VB is a high-performance single N-channel MOSFET in TO263 package, designed for applications requiring high current and low power consumption. With a drain-source voltage (VDS) of up to 40V, the MOSFET can withstand high voltage stress, while its extremely low on-resistance (RDS(ON)) provides excellent conductivity and energy efficiency. Using Trench technology, the MOSFET has excellent switching performance and low power consumption, suitable for a variety of high-efficiency power management and power conversion applications.
IPB041N04N G-VB is a high-performance single N-channel MOSFET in TO263 package, designed for applications requiring high current and low power consumption. With a drain-source voltage (VDS) of up to 40V, the MOSFET can withstand high voltage stress, while its extremely low on-resistance (RDS(ON)) provides excellent conductivity and energy efficiency. Using Trench technology, the MOSFET has excellent switching performance and low power consumption, suitable for a variety of high-efficiency power management and power conversion applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description:
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2.5mΩ@VGS=4.5V
- 2mΩ@VGS=10V
- **Drain current (ID)**: 150A
- **Technology**: Trench technology with low on-resistance and high switching speed
- **Thermal resistance (Rth(ja))**: About 62 K/W (typical value)
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2.5mΩ@VGS=4.5V
- 2mΩ@VGS=10V
- **Drain current (ID)**: 150A
- **Technology**: Trench technology with low on-resistance and high switching speed
- **Thermal resistance (Rth(ja))**: About 62 K/W (typical value)
Domain and module applications：
Applicable fields and module applications:
1. **High-efficiency switching power supply (SMPS)**: The low on-resistance and high current capability of IPB041N04N G-VB make it very suitable for use in high-efficiency switching power supplies. In these applications, it can significantly reduce power consumption and heat, improve overall energy efficiency, and thus improve power conversion efficiency and system reliability.
2. **Electric vehicle (EV) charging system**: This MOSFET performs well in electric vehicle charging systems. Its high current handling capability and low on-resistance can support the fast charging process, ensure the high efficiency and stability of the charging system, while reducing heat generation and improving charging safety.
3. **Data center server power module**: In data center and server power management, the high current capability and low power consumption characteristics of IPB041N04N G-VB make it an ideal choice. It can handle large current loads and maintain high efficiency, thereby reducing system energy consumption and improving the operational efficiency of data centers.
4. **Industrial Motor Drive System**: In industrial automation and motor drive applications, this MOSFET can effectively manage high current loads and ensure a stable current supply. Its low on-resistance and high switching speed make it suitable for inverter and servo control systems, improving the performance and reliability of drive systems.
5. **DC-DC Converter**: The low on-resistance and high current capability of IPB041N04N G-VB make it suitable for a variety of DC-DC converter applications. These features can improve energy conversion efficiency, reduce power consumption and heat generation, and are suitable for use in power management, power regulation and power conversion modules.
1. **High-efficiency switching power supply (SMPS)**: The low on-resistance and high current capability of IPB041N04N G-VB make it very suitable for use in high-efficiency switching power supplies. In these applications, it can significantly reduce power consumption and heat, improve overall energy efficiency, and thus improve power conversion efficiency and system reliability.
2. **Electric vehicle (EV) charging system**: This MOSFET performs well in electric vehicle charging systems. Its high current handling capability and low on-resistance can support the fast charging process, ensure the high efficiency and stability of the charging system, while reducing heat generation and improving charging safety.
3. **Data center server power module**: In data center and server power management, the high current capability and low power consumption characteristics of IPB041N04N G-VB make it an ideal choice. It can handle large current loads and maintain high efficiency, thereby reducing system energy consumption and improving the operational efficiency of data centers.
4. **Industrial Motor Drive System**: In industrial automation and motor drive applications, this MOSFET can effectively manage high current loads and ensure a stable current supply. Its low on-resistance and high switching speed make it suitable for inverter and servo control systems, improving the performance and reliability of drive systems.
5. **DC-DC Converter**: The low on-resistance and high current capability of IPB041N04N G-VB make it suitable for a variety of DC-DC converter applications. These features can improve energy conversion efficiency, reduce power consumption and heat generation, and are suitable for use in power management, power regulation and power conversion modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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