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IPB03N03LB G-VB Product details
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1. Product Introduction
**IPB03N03LB G-VB** is a high-performance single N-channel MOSFET in TO263 package. It is designed for high current and high-efficiency applications and uses advanced Trench technology to optimize current handling capabilities and reduce power consumption. The MOSFET has a maximum drain-source voltage (VDS) of 30V and is able to achieve an on-resistance (RDS(ON)) as low as 2.3mΩ at a gate-source voltage (VGS) of 10V and 3.2mΩ at a gate-source voltage of 4.5V. Its maximum continuous drain current is 150A, making it suitable for a variety of applications with high current requirements. The device is stable over a wide operating temperature range and has excellent switching performance, making it suitable for high-frequency and high-efficiency applications.
**IPB03N03LB G-VB** is a high-performance single N-channel MOSFET in TO263 package. It is designed for high current and high-efficiency applications and uses advanced Trench technology to optimize current handling capabilities and reduce power consumption. The MOSFET has a maximum drain-source voltage (VDS) of 30V and is able to achieve an on-resistance (RDS(ON)) as low as 2.3mΩ at a gate-source voltage (VGS) of 10V and 3.2mΩ at a gate-source voltage of 4.5V. Its maximum continuous drain current is 150A, making it suitable for a variety of applications with high current requirements. The device is stable over a wide operating temperature range and has excellent switching performance, making it suitable for high-frequency and high-efficiency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | 2.3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description
- **Model**: IPB03N03LB G-VB
- **Package**: TO263
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3.2mΩ @ VGS=4.5V
- 2.3mΩ @ VGS=10V
- **Continuous drain current (ID)**: 150A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 175°C
- **Typical switching time**: Fast switching characteristics, suitable for high frequency operation
- **Model**: IPB03N03LB G-VB
- **Package**: TO263
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3.2mΩ @ VGS=4.5V
- 2.3mΩ @ VGS=10V
- **Continuous drain current (ID)**: 150A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 175°C
- **Typical switching time**: Fast switching characteristics, suitable for high frequency operation
Domain and module applications：
3. Application fields and modules
**IPB03N03LB G-VB** MOSFET performs well in multiple high-current, high-efficiency application scenarios. Here are some typical applications:
- **Power management system**: Suitable for high-efficiency DC-DC converters, it can handle large currents and reduce power losses, optimizing power conversion efficiency. This makes it very suitable for high-efficiency power modules such as industrial power supplies, server power supplies, and power adapters.
- **Electric Vehicles (EV)**: In the battery management system and motor controller of electric vehicles, this MOSFET can handle high currents, provide low conduction losses, and improve the overall efficiency and endurance of the battery and motor system.
- **Motor drive**: Suitable for motor drive modules that require high current and low power consumption, such as industrial automation equipment and robot control systems. It can provide reliable current switching and efficient power drive.
- **Power Amplifier**: In high power amplifier applications, the IPB03N03LB G-VB MOSFET can provide stable high current support and low conduction loss, ensuring high efficiency and stable operation of the power amplifier.
- **Consumer Electronics**: In high-performance battery chargers and other small power devices, this MOSFET can effectively reduce power consumption and improve energy conversion efficiency to meet the high-efficiency needs of modern electronic products.
The high current handling capability and low on-resistance of this MOSFET make it an ideal choice for improving system efficiency and stability in these application scenarios.
**IPB03N03LB G-VB** MOSFET performs well in multiple high-current, high-efficiency application scenarios. Here are some typical applications:
- **Power management system**: Suitable for high-efficiency DC-DC converters, it can handle large currents and reduce power losses, optimizing power conversion efficiency. This makes it very suitable for high-efficiency power modules such as industrial power supplies, server power supplies, and power adapters.
- **Electric Vehicles (EV)**: In the battery management system and motor controller of electric vehicles, this MOSFET can handle high currents, provide low conduction losses, and improve the overall efficiency and endurance of the battery and motor system.
- **Motor drive**: Suitable for motor drive modules that require high current and low power consumption, such as industrial automation equipment and robot control systems. It can provide reliable current switching and efficient power drive.
- **Power Amplifier**: In high power amplifier applications, the IPB03N03LB G-VB MOSFET can provide stable high current support and low conduction loss, ensuring high efficiency and stable operation of the power amplifier.
- **Consumer Electronics**: In high-performance battery chargers and other small power devices, this MOSFET can effectively reduce power consumption and improve energy conversion efficiency to meet the high-efficiency needs of modern electronic products.
The high current handling capability and low on-resistance of this MOSFET make it an ideal choice for improving system efficiency and stability in these application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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