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IPB03N03LA G-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction of IPB03N03LA G-VB MOSFET
IPB03N03LA G-VB is a high-efficiency N-channel power MOSFET in TO-263 package, designed for high current and high efficiency switching applications. Its maximum drain-source voltage is 30V and it has extremely low on-resistance, making it suitable for applications that require high current carrying capacity. MOSFET uses trench technology, which not only makes it outstanding in low on-resistance, but also improves switching performance and overall efficiency. Its low threshold voltage (Vth) enables it to turn on at a lower gate voltage, further improving its switching performance.
IPB03N03LA G-VB is a high-efficiency N-channel power MOSFET in TO-263 package, designed for high current and high efficiency switching applications. Its maximum drain-source voltage is 30V and it has extremely low on-resistance, making it suitable for applications that require high current carrying capacity. MOSFET uses trench technology, which not only makes it outstanding in low on-resistance, but also improves switching performance and overall efficiency. Its low threshold voltage (Vth) enables it to turn on at a lower gate voltage, further improving its switching performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description of IPB03N03LA G-VB MOSFET
- **Package type**: TO-263
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS=4.5V
- 2.4mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 98A
- **Technology**: Trench technology
- **Package type**: TO-263
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS=4.5V
- 2.4mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 98A
- **Technology**: Trench technology
Domain and module applications：
III. Application fields and module examples of IPB03N03LA G-VB
1. **Electric vehicle (EV) control system**: In electric vehicles, the low on-resistance and high current handling capability of IPB03N03LA G-VB are very suitable for battery management systems and motor drive modules. These systems require efficient power switches to ensure high efficiency and extend battery life, and IPB03N03LA G-VB can provide excellent performance in these applications.
2. **DC-DC converter**: IPB03N03LA G-VB is widely used in the synchronous rectification stage of DC-DC converters, and its low on-resistance helps improve power conversion efficiency and reduce power loss. It is especially suitable for power conversion applications that require high power density and high efficiency, such as server power supplies and power modules for communication equipment.
3. **Industrial power system**: In industrial power and uninterruptible power supply (UPS) systems, IPB03N03LA G-VB is used in high current switching applications, providing reliable performance and efficient current management. These systems need to handle high currents and maintain high efficiency, and the IPB03N03LA G-VB meets these requirements with its low on-resistance and high current capability.
4. **Consumer Electronics**: In consumer electronics such as large appliances and gaming devices, the IPB03N03LA G-VB can be used for switch regulation in power management modules, where its high current handling capability and low on-resistance help improve the overall energy efficiency of the system and reduce power losses.
In summary, the IPB03N03LA G-VB MOSFET is suitable for a variety of high-performance power management applications with its low on-resistance and high current carrying capacity, and is widely used in electric vehicles, DC-DC converters, industrial power supplies, and consumer electronics.
1. **Electric vehicle (EV) control system**: In electric vehicles, the low on-resistance and high current handling capability of IPB03N03LA G-VB are very suitable for battery management systems and motor drive modules. These systems require efficient power switches to ensure high efficiency and extend battery life, and IPB03N03LA G-VB can provide excellent performance in these applications.
2. **DC-DC converter**: IPB03N03LA G-VB is widely used in the synchronous rectification stage of DC-DC converters, and its low on-resistance helps improve power conversion efficiency and reduce power loss. It is especially suitable for power conversion applications that require high power density and high efficiency, such as server power supplies and power modules for communication equipment.
3. **Industrial power system**: In industrial power and uninterruptible power supply (UPS) systems, IPB03N03LA G-VB is used in high current switching applications, providing reliable performance and efficient current management. These systems need to handle high currents and maintain high efficiency, and the IPB03N03LA G-VB meets these requirements with its low on-resistance and high current capability.
4. **Consumer Electronics**: In consumer electronics such as large appliances and gaming devices, the IPB03N03LA G-VB can be used for switch regulation in power management modules, where its high current handling capability and low on-resistance help improve the overall energy efficiency of the system and reduce power losses.
In summary, the IPB03N03LA G-VB MOSFET is suitable for a variety of high-performance power management applications with its low on-resistance and high current carrying capacity, and is widely used in electric vehicles, DC-DC converters, industrial power supplies, and consumer electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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