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IPB039N04L G-VB Product details
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IPB039N04L G-VB Product Introduction
IPB039N04L G-VB is a high-efficiency single-channel N-type power MOSFET designed in TO263 package. This MOSFET is known for its excellent switching performance and low on-resistance, and is suitable for electronic applications that require high current handling and low power consumption. Its maximum drain-source voltage is 40V, the gate-source voltage range is ±20V, and the threshold voltage is 3V. With advanced Trench technology, IPB039N04L G-VB can provide extremely low on-resistance at low gate drive voltage, thereby significantly reducing power loss and improving system efficiency. Its drain current carrying capacity of up to 150A enables it to operate stably under high load conditions.
IPB039N04L G-VB is a high-efficiency single-channel N-type power MOSFET designed in TO263 package. This MOSFET is known for its excellent switching performance and low on-resistance, and is suitable for electronic applications that require high current handling and low power consumption. Its maximum drain-source voltage is 40V, the gate-source voltage range is ±20V, and the threshold voltage is 3V. With advanced Trench technology, IPB039N04L G-VB can provide extremely low on-resistance at low gate drive voltage, thereby significantly reducing power loss and improving system efficiency. Its drain current carrying capacity of up to 150A enables it to operate stably under high load conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
IPB039N04L G-VB Parameter Description
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2.5mΩ@VGS=4.5V
- 2mΩ@VGS=10V
- **Drain current (ID)**: 150A
- **Technology**: Trench technology
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2.5mΩ@VGS=4.5V
- 2mΩ@VGS=10V
- **Drain current (ID)**: 150A
- **Technology**: Trench technology
Domain and module applications：
Application fields and modules of IPB039N04L G-VB
With its excellent current handling capability and low on-resistance, IPB039N04L G-VB has wide applications in multiple fields and modules:
1. **Automotive electronic systems**: In modern cars, applications such as electric power steering, electric brake systems, and automotive lighting control modules require efficient power management and reliable power transmission. IPB039N04L G-VB can meet these needs, providing stable performance and low power consumption.
2. **DC-DC converter**: In various power conversion applications, such as buck and boost converters, the low on-resistance and high current handling capability of IPB039N04L G-VB can effectively improve conversion efficiency and reduce energy loss, thereby improving the efficiency of the entire power system.
3. **Power Tools**: For power tools and other high-power motor applications, the high current carrying capacity and low power consumption of the IPB039N04L G-VB make it an ideal choice to meet the performance requirements of power tools under high load conditions.
4. **Industrial Control Systems**: In industrial motor drive modules and control systems, this MOSFET can be used to provide efficient power control, support high current and high load applications, and ensure system stability and reliability.
5. **Server Power**: In the power supply design of servers and data centers, the high efficiency and low power consumption of the IPB039N04L G-VB can help reduce heat generation and improve the overall efficiency of the power system, thereby improving the operating performance of the data center.
With its excellent current handling capability and low on-resistance, IPB039N04L G-VB has wide applications in multiple fields and modules:
1. **Automotive electronic systems**: In modern cars, applications such as electric power steering, electric brake systems, and automotive lighting control modules require efficient power management and reliable power transmission. IPB039N04L G-VB can meet these needs, providing stable performance and low power consumption.
2. **DC-DC converter**: In various power conversion applications, such as buck and boost converters, the low on-resistance and high current handling capability of IPB039N04L G-VB can effectively improve conversion efficiency and reduce energy loss, thereby improving the efficiency of the entire power system.
3. **Power Tools**: For power tools and other high-power motor applications, the high current carrying capacity and low power consumption of the IPB039N04L G-VB make it an ideal choice to meet the performance requirements of power tools under high load conditions.
4. **Industrial Control Systems**: In industrial motor drive modules and control systems, this MOSFET can be used to provide efficient power control, support high current and high load applications, and ensure system stability and reliability.
5. **Server Power**: In the power supply design of servers and data centers, the high efficiency and low power consumption of the IPB039N04L G-VB can help reduce heat generation and improve the overall efficiency of the power system, thereby improving the operating performance of the data center.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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