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IPB038N12N3 G-VB Product details
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1. IPB038N12N3 G-VB Product Introduction:
IPB038N12N3 G-VB is a high-performance single-channel N-channel MOSFET produced by Infineon, using TO263 package. This MOSFET is designed for high current and high voltage applications, with a drain-source voltage (VDS) of up to 100V and a maximum drain current (ID) of 140A, suitable for use in high power density environments. IPB038N12N3 G-VB has an extremely low on-resistance RDS(ON) (4mΩ @ VGS=10V), and optimizes the switching characteristics and conduction performance through Trench technology, significantly reducing power consumption and heat generation, making it an ideal choice for high-efficiency power management systems.
IPB038N12N3 G-VB is a high-performance single-channel N-channel MOSFET produced by Infineon, using TO263 package. This MOSFET is designed for high current and high voltage applications, with a drain-source voltage (VDS) of up to 100V and a maximum drain current (ID) of 140A, suitable for use in high power density environments. IPB038N12N3 G-VB has an extremely low on-resistance RDS(ON) (4mΩ @ VGS=10V), and optimizes the switching characteristics and conduction performance through Trench technology, significantly reducing power consumption and heat generation, making it an ideal choice for high-efficiency power management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 3V | 140A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 3V | 140A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 3V | 140A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. IPB038N12N3 G-VB Detailed parameter description:
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS=10V
- **Maximum drain current (ID)**: 140A
- **Technology type**: Trench
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS=10V
- **Maximum drain current (ID)**: 140A
- **Technology type**: Trench
Domain and module applications：
3. Application fields and modules:
1. **High-power DC-DC converter**:
In high-power DC-DC converters, the IPB038N12N3 G-VB can effectively handle high load demands in the power conversion process through its low on-resistance and high current carrying capacity. This makes it excel in data centers, telecommunications equipment, and high-efficiency power systems, reducing energy loss and improving system efficiency.
2. **Electric vehicle (EV) power management**:
In the power management system of electric vehicles, this MOSFET can be used in motor drive systems, chargers, and power distribution modules. Due to its high voltage tolerance and low on-resistance, the IPB038N12N3 G-VB can effectively handle high current demands in electric vehicles, optimize overall energy management, and enhance system reliability.
3. **Industrial power supply**:
In various industrial power supply and control systems, the high current and high voltage withstand characteristics of the IPB038N12N3 G-VB enable it to cope with stringent power requirements. It can be used in industrial motor control, power conversion and high-power switching modules to ensure system stability and high efficiency.
4. **Uninterruptible Power Supply (UPS) System**:
In UPS systems, this MOSFET can handle high-current switching and power conversion to ensure that the system can provide a stable power supply when power is interrupted. Its excellent switching performance and low on-resistance help reduce system power consumption and heat generation, and improve the overall efficiency and reliability of the UPS system.
Through the above application areas, IPB038N12N3 G-VB demonstrates its strong capabilities in high current, high voltage and high efficiency environments, providing a reliable solution for power management and high power applications.
1. **High-power DC-DC converter**:
In high-power DC-DC converters, the IPB038N12N3 G-VB can effectively handle high load demands in the power conversion process through its low on-resistance and high current carrying capacity. This makes it excel in data centers, telecommunications equipment, and high-efficiency power systems, reducing energy loss and improving system efficiency.
2. **Electric vehicle (EV) power management**:
In the power management system of electric vehicles, this MOSFET can be used in motor drive systems, chargers, and power distribution modules. Due to its high voltage tolerance and low on-resistance, the IPB038N12N3 G-VB can effectively handle high current demands in electric vehicles, optimize overall energy management, and enhance system reliability.
3. **Industrial power supply**:
In various industrial power supply and control systems, the high current and high voltage withstand characteristics of the IPB038N12N3 G-VB enable it to cope with stringent power requirements. It can be used in industrial motor control, power conversion and high-power switching modules to ensure system stability and high efficiency.
4. **Uninterruptible Power Supply (UPS) System**:
In UPS systems, this MOSFET can handle high-current switching and power conversion to ensure that the system can provide a stable power supply when power is interrupted. Its excellent switching performance and low on-resistance help reduce system power consumption and heat generation, and improve the overall efficiency and reliability of the UPS system.
Through the above application areas, IPB038N12N3 G-VB demonstrates its strong capabilities in high current, high voltage and high efficiency environments, providing a reliable solution for power management and high power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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